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Cazaux, Jacques (2011) Calculated dependence of few-layer graphene on secondary electron emissions from SiC. Applied Physics Letters, 98 (1). 13109pp. doi:10.1063/1.3534805

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Reference TypeJournal (article/letter/editorial)
TitleCalculated dependence of few-layer graphene on secondary electron emissions from SiC
JournalApplied Physics Letters
AuthorsCazaux, JacquesAuthor
Year2011 (January 3)Volume98
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.3534805Search in ResearchGate
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Mindat Ref. ID8590944Long-form Identifiermindat:1:5:8590944:7
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Full ReferenceCazaux, Jacques (2011) Calculated dependence of few-layer graphene on secondary electron emissions from SiC. Applied Physics Letters, 98 (1). 13109pp. doi:10.1063/1.3534805
Plain TextCazaux, Jacques (2011) Calculated dependence of few-layer graphene on secondary electron emissions from SiC. Applied Physics Letters, 98 (1). 13109pp. doi:10.1063/1.3534805
In(2011, January) Applied Physics Letters Vol. 98 (1) AIP Publishing

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Cazaux, Jacques (2011) Calculated effects of work function changes on the dispersion of secondary electron emission data: Application for Al and Si and related elements. Journal of Applied Physics, 110 (2). 24906pp. doi:10.1063/1.3608046
(2011) Temperature dependence of the field emission from the few-layer graphene film. Applied Physics Letters, 99 (16). 163103pp. doi:10.1063/1.3651323
Cazaux, Jacques (1999) Some considerations on the secondary electron emission, δ, from e− irradiated insulators. Journal of Applied Physics, 85 (2). 1137-1147 doi:10.1063/1.369239
Cazaux, Jacques (2010) Calculated influence of work function on SE escape probability and Secondary Electron Emission yield. Applied Surface Science, 257. 1002-1009 doi:10.1016/j.apsusc.2010.08.007
Deretzis, I., La Magna, A. (2011) Single-layer metallicity and interface magnetism of epitaxial graphene on SiC(0001¯). Applied Physics Letters, 98 (2). 23113pp. doi:10.1063/1.3543847
Santandrea, S., Giubileo, F., Grossi, V., Santucci, S., Passacantando, M., Schroeder, T., Lupina, G., Di Bartolomeo, A. (2011) Field emission from single and few-layer graphene flakes. Applied Physics Letters, 98 (16). 163109pp. doi:10.1063/1.3579533
Faugeras, C., Nerrière, A., Potemski, M., Mahmood, A., Dujardin, E., Berger, C., de Heer, W. A. (2008) Few-layer graphene on SiC, pyrolitic graphite, and graphene: A Raman scattering study. Applied Physics Letters, 92 (1). 11914pp. doi:10.1063/1.2828975
Liang, Xiaogan, Giacometti, Valentina, Ismach, Ariel, Harteneck, Bruce D., Olynick, Deirdre L., Cabrini, Stefano (2010) Roller-style electrostatic printing of prepatterned few-layer-graphenes. Applied Physics Letters, 96 (1). 13109pp. doi:10.1063/1.3291037
Kaneko, Hiromi, Kimoto, Tsunenobu (2011) Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation. Applied Physics Letters, 98 (26). 262106pp. doi:10.1063/1.3604795
Michon, A., Vézian, S., Ouerghi, A., Zielinski, M., Chassagne, T., Portail, M. (2010) Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition. Applied Physics Letters, 97 (17). 171909pp. doi:10.1063/1.3503972
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