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Yuan, H. T., Toh, M., Morimoto, K., Tan, W., Wei, F., Shimotani, H., Kloc, Ch., Iwasa, Y. (2011) Liquid-gated electric-double-layer transistor on layered metal dichalcogenide, SnS2. Applied Physics Letters, 98 (1). 12102pp. doi:10.1063/1.3535613

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Reference TypeJournal (article/letter/editorial)
TitleLiquid-gated electric-double-layer transistor on layered metal dichalcogenide, SnS2
JournalApplied Physics Letters
AuthorsYuan, H. T.Author
Toh, M.Author
Morimoto, K.Author
Tan, W.Author
Wei, F.Author
Shimotani, H.Author
Kloc, Ch.Author
Iwasa, Y.Author
Year2011 (January 3)Volume98
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.3535613Search in ResearchGate
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Mindat Ref. ID8590954Long-form Identifiermindat:1:5:8590954:4
GUID0
Full ReferenceYuan, H. T., Toh, M., Morimoto, K., Tan, W., Wei, F., Shimotani, H., Kloc, Ch., Iwasa, Y. (2011) Liquid-gated electric-double-layer transistor on layered metal dichalcogenide, SnS2. Applied Physics Letters, 98 (1). 12102pp. doi:10.1063/1.3535613
Plain TextYuan, H. T., Toh, M., Morimoto, K., Tan, W., Wei, F., Shimotani, H., Kloc, Ch., Iwasa, Y. (2011) Liquid-gated electric-double-layer transistor on layered metal dichalcogenide, SnS2. Applied Physics Letters, 98 (1). 12102pp. doi:10.1063/1.3535613
In(2011, January) Applied Physics Letters Vol. 98 (1) AIP Publishing

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