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Wu, Yung-Hsien, Wu, Min-Lin, Lyu, Rong-Jhe, Wu, Jia-Rong, Chen, Lun-Lun, Lin, Chia-Chun (2011) Crystalline ZrO2-gated Ge metal-oxide-semiconductor capacitors fabricated on Si substrate with Y2O3 as passivation layer. Applied Physics Letters, 98 (20). 203502pp. doi:10.1063/1.3590923

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Reference TypeJournal (article/letter/editorial)
TitleCrystalline ZrO2-gated Ge metal-oxide-semiconductor capacitors fabricated on Si substrate with Y2O3 as passivation layer
JournalApplied Physics Letters
AuthorsWu, Yung-HsienAuthor
Wu, Min-LinAuthor
Lyu, Rong-JheAuthor
Wu, Jia-RongAuthor
Chen, Lun-LunAuthor
Lin, Chia-ChunAuthor
Year2011 (May 16)Volume98
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.3590923Search in ResearchGate
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Mindat Ref. ID8593089Long-form Identifiermindat:1:5:8593089:0
GUID0
Full ReferenceWu, Yung-Hsien, Wu, Min-Lin, Lyu, Rong-Jhe, Wu, Jia-Rong, Chen, Lun-Lun, Lin, Chia-Chun (2011) Crystalline ZrO2-gated Ge metal-oxide-semiconductor capacitors fabricated on Si substrate with Y2O3 as passivation layer. Applied Physics Letters, 98 (20). 203502pp. doi:10.1063/1.3590923
Plain TextWu, Yung-Hsien, Wu, Min-Lin, Lyu, Rong-Jhe, Wu, Jia-Rong, Chen, Lun-Lun, Lin, Chia-Chun (2011) Crystalline ZrO2-gated Ge metal-oxide-semiconductor capacitors fabricated on Si substrate with Y2O3 as passivation layer. Applied Physics Letters, 98 (20). 203502pp. doi:10.1063/1.3590923
In(2011, May) Applied Physics Letters Vol. 98 (20) AIP Publishing

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Wu, Yung-Hsien, Wu, Min-Lin, Wu, Jia-Rong, Chen, Lun-Lun (2010) Ge-stabilized tetragonal ZrO2 as gate dielectric for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate. Applied Physics Letters, 97 (4). 43503pp. doi:10.1063/1.3455904
Wu, Yung-Hsien, Wu, Jia-Rong, Wu, Min-Lin, Chen, Lun-Lun, Lin, Chia-Chun (2011) Ge-Based Nonvolatile Memory Formed on Si Substrate with Ge-Stabilized Tetragonal ZrO2 as Charge Trapping Layer. Journal of the Electrochemical Society, 158. doi:10.1149/1.3547717
Wu, Yung-Hsien, Lin, Chia-Chun, Chen, Lun-Lun, Hu, Yao-Chung, Wu, Jia-Rong, Wu, Min-Lin (2011) High-performance metal-insulator-metal capacitor with Ge-stabilized tetragonal ZrO2/amorphous La-doped ZrO2 dielectric. Applied Physics Letters, 98 (1). 13506pp. doi:10.1063/1.3535605
Wu, Yung-Hsien, Wu, Jia-Rong, Wu, Min-Lin (2007) Thermal gate SiO2 for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate. Applied Physics Letters, 91 (9). 93503pp. doi:10.1063/1.2776352
Wu, Jia-Rong, Wu, Yung-Hsien, Hou, Chin-Yao, Wu, Min-Lin, Lin, Chia-Chun, Chen, Lun-Lun (2011) Impact of fluorine treatment on Fermi level depinning for metal/germanium Schottky junctions. Applied Physics Letters, 99 (25). 253504pp. doi:10.1063/1.3666779
Wu, Yung-Hsien, Lin, Chia-Chun, Chen, Lun-Lun, Chen, Bo-Yu, Wu, Min-Lin, Wu, Jia-Rong (2010) Impact of top electrode on electrical stress reliability of metal-insulator-metal capacitor with amorphous ZrTiO4 film. Applied Physics Letters, 96 (13). 133501pp. doi:10.1063/1.3377914
Wu, Yung-Hsien, Wu, Jia-Rong, Lin, Yuan-Sheng, Wu, Min-Lin (2008) Thermal SiO2 gated Ge metal-oxide-semiconductor capacitor on Si substrate formed by thin amorphous Ge oxidation and thermal annealing. Applied Physics Letters, 93 (8). 83506pp. doi:10.1063/1.2976327
Wu, Yung-Hsien, Wu, Jia-Rong, Wu, Min-Lin, Chen, Lun-Lun, Lin, Yuan-Sheng (2009) Ge-Based Silicon–Oxide–Nitride–Oxide–Silicon-Type Nonvolatile Memory Formed on Si Substrate. Journal of the Electrochemical Society, 156. doi:10.1149/1.3242292
Wu, Yung-Hsien, Chen, Bo-Yu, Chen, Lun-Lun, Wu, Jia-Rong, Wu, Min-Lin (2009) Metal-insulator-metal capacitor with high capacitance density and low leakage current using ZrTiO4 film. Applied Physics Letters, 95 (11). 113502pp. doi:10.1063/1.3222895
Wu, Min-Lin, Wu, Yung-Hsien, Lin, Chia-Chun, Chen, Lun-Lun (2012) Formation of SiGe nanocrystals embedded in Al2O3 for the application of write-once-read-many-times memory. Applied Physics Letters, 101 (16). 163503pp. doi:10.1063/1.4760259
Lee, Ching-Wei, Wu, Yung-Hsien, Hsieh, Ching-Heng, Lin, Chia-Chun (2014) Epitaxial GeSn film formed by solid phase epitaxy and its application to Yb2O3-gated GeSn metal-oxide-semiconductor capacitors with sub-nm equivalent oxide thickness. Applied Physics Letters, 105 (20). 203508pp. doi:10.1063/1.4902119
 
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