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Marchiori, C., Frank, M. M., Bruley, J., Narayanan, V., Fompeyrine, J. (2011) Epitaxial SrO interfacial layers for HfO2–Si gate stack scaling. Applied Physics Letters, 98 (5). 52908pp. doi:10.1063/1.3549202

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial SrO interfacial layers for HfO2–Si gate stack scaling
JournalApplied Physics Letters
AuthorsMarchiori, C.Author
Frank, M. M.Author
Bruley, J.Author
Narayanan, V.Author
Fompeyrine, J.Author
Year2011 (January 31)Volume98
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.3549202Search in ResearchGate
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Mindat Ref. ID8594518Long-form Identifiermindat:1:5:8594518:4
GUID0
Full ReferenceMarchiori, C., Frank, M. M., Bruley, J., Narayanan, V., Fompeyrine, J. (2011) Epitaxial SrO interfacial layers for HfO2–Si gate stack scaling. Applied Physics Letters, 98 (5). 52908pp. doi:10.1063/1.3549202
Plain TextMarchiori, C., Frank, M. M., Bruley, J., Narayanan, V., Fompeyrine, J. (2011) Epitaxial SrO interfacial layers for HfO2–Si gate stack scaling. Applied Physics Letters, 98 (5). 52908pp. doi:10.1063/1.3549202
In(2011, January) Applied Physics Letters Vol. 98 (5) AIP Publishing

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Dubourdieu, C., Cartier, E., Bruley, J., Hopstaken, M., Frank, M. M., Narayanan, V. (2011) High temperature (1000 °C) compatible Y–La–Si–O silicate gate dielectric in direct contact with Si with 7.7 Å equivalent oxide thickness. Applied Physics Letters, 98 (25). 252901pp. doi:10.1063/1.3600790
Andersson, C., Süess, M. J., Webb, D. J., Marchiori, C., Sousa, M., Caimi, D., Siegwart, H., Fompeyrine, J. (2011) Mobility and Dit distributions for p-channel MOSFETs with HfO2/LaGeOx passivating layers on germanium. Journal of Applied Physics, 110 (11). 114504pp. doi:10.1063/1.3660717
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