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Kim, S.-W., Yoo, J.-H., Koo, S.-M., Ko, D.-H., Lee, H.-J. (2011) Characterization of channel strain evolution upon the silicidation of recessed source/drain Si1−xGex structures. Applied Physics Letters, 99 (13). 133107pp. doi:10.1063/1.3633346

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of channel strain evolution upon the silicidation of recessed source/drain Si1−xGex structures
JournalApplied Physics Letters
AuthorsKim, S.-W.Author
Yoo, J.-H.Author
Koo, S.-M.Author
Ko, D.-H.Author
Lee, H.-J.Author
Year2011 (September 26)Volume99
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3633346Search in ResearchGate
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Mindat Ref. ID8596114Long-form Identifiermindat:1:5:8596114:6
GUID0
Full ReferenceKim, S.-W., Yoo, J.-H., Koo, S.-M., Ko, D.-H., Lee, H.-J. (2011) Characterization of channel strain evolution upon the silicidation of recessed source/drain Si1−xGex structures. Applied Physics Letters, 99 (13). 133107pp. doi:10.1063/1.3633346
Plain TextKim, S.-W., Yoo, J.-H., Koo, S.-M., Ko, D.-H., Lee, H.-J. (2011) Characterization of channel strain evolution upon the silicidation of recessed source/drain Si1−xGex structures. Applied Physics Letters, 99 (13). 133107pp. doi:10.1063/1.3633346
In(2011, September) Applied Physics Letters Vol. 99 (13) AIP Publishing

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Yoo, J.-H., Kim, S.-W., Koo, S.-M., Ko, D.-H., Lee, H.-J. (2011) Achievement of a high channel strain via dry oxidation of recessed source/drain Si1−xGex structures. Applied Physics Letters, 98 (13). 133121pp. doi:10.1063/1.3573833
Lim, Y. S., Lee, J. Y., Kim, H. S., Moon, D. W. (2000) Strain-induced diffusion in a strained Si1−xGex/Si heterostructure. Applied Physics Letters, 77 (25). 4157-4159 doi:10.1063/1.1327280
Min, B.-G., Pae, Y. H., Jun, K. S., Ko, D.-H., Kim, H., Cho, M.-H., Lee, T.-W. (2006) Formation of a Ge-rich layer during the oxidation of strained Si1−xGex. Journal of Applied Physics, 100 (1). 16102pp. doi:10.1063/1.2201690
Kim, S-W, Yoo, J-H, Koo, S-M, Ko, D-H (2011) Strain Measurement of Selective Epitaxial Growth (SEG) SiGe Structure by the Nano Beam Diffraction (NBD) Method. Microscopy and Microanalysis, 17. 1108-1109 doi:10.1017/s1431927611006416
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Dang, Y. X., Fan, W. J., Lu, F., Wang, H., Zhang, D. H., Yoon, S. F. (2006) Study of the interdiffusion effect on the band structures of Si1−xGex∕Si quantum wells. Journal of Applied Physics, 99 (7). 76108pp. doi:10.1063/1.2186983
Hong, S., Kim, H.-W., Bae, D. K., Song, S. C., Lee, G.-D., Yoon, E., Kim, C. S., Foo, Y. L., Greene, J. E. (2006) Formation of flat, relaxed Si1−xGex alloys on Si(001) without buffer layers. Applied Physics Letters, 88 (12). 122103pp. doi:10.1063/1.2188043
Lee, J. H., Lee, S. H., Kim, W. S., Lee, H. J., Heo, J. N., Jeong, T. W., Baik, C. W., Park, S. H., Yu, SeGi, Park, J. B., Jin, Y. W., Kim, J. M., Lee, H. J., Moon, J. W., Yoo, M. A., Nam, J. W., Cho, S. H., Ha, J. S., Yoon, T. I., Park, J. H., Choe, D. H. (2006) Current degradation mechanism of single wall carbon nanotube emitters during field emission. Applied Physics Letters, 89 (25). 253115pp. doi:10.1063/1.2416250
Kim, J.-H., Grishin, A. M., Radamson, H. H. (2006) The effect of strained Si1−xGex and Si1−yCy layers for La0.75Sr0.25MnO3 films grown on oxide-buffered Si substrates. Journal of Applied Physics, 99 (1). 14903pp. doi:10.1063/1.2150260
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Li, J. H., Koppensteiner, E., Bauer, G., Hohnisch, M., Herzog, H.‐J., Schäffler, F. (1995) Evolution of strain relaxation in compositionally graded Si1−xGex films on Si(001). Applied Physics Letters, 67 (2). 223-225 doi:10.1063/1.114674
 
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