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Hu, X. J., Ye, J. S., Hu, H., Chen, X. H., Shen, Y. G. (2011) Phosphorus ion implantation and annealing induced n-type conductivity and microstructure evolution in ultrananocrystalline diamond films. Applied Physics Letters, 99 (13). 131902pp. doi:10.1063/1.3641458

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Reference TypeJournal (article/letter/editorial)
TitlePhosphorus ion implantation and annealing induced n-type conductivity and microstructure evolution in ultrananocrystalline diamond films
JournalApplied Physics Letters
AuthorsHu, X. J.Author
Ye, J. S.Author
Hu, H.Author
Chen, X. H.Author
Shen, Y. G.Author
Year2011 (September 26)Volume99
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3641458Search in ResearchGate
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Mindat Ref. ID8596133Long-form Identifiermindat:1:5:8596133:1
GUID0
Full ReferenceHu, X. J., Ye, J. S., Hu, H., Chen, X. H., Shen, Y. G. (2011) Phosphorus ion implantation and annealing induced n-type conductivity and microstructure evolution in ultrananocrystalline diamond films. Applied Physics Letters, 99 (13). 131902pp. doi:10.1063/1.3641458
Plain TextHu, X. J., Ye, J. S., Hu, H., Chen, X. H., Shen, Y. G. (2011) Phosphorus ion implantation and annealing induced n-type conductivity and microstructure evolution in ultrananocrystalline diamond films. Applied Physics Letters, 99 (13). 131902pp. doi:10.1063/1.3641458
In(2011, September) Applied Physics Letters Vol. 99 (13) AIP Publishing

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