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Scalise, E., Houssa, M., Pourtois, G., Afanas’ev, V. V., Stesmans, A. (2011) Inelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling. Applied Physics Letters, 99 (13). 132101pp. doi:10.1063/1.3644158

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Reference TypeJournal (article/letter/editorial)
TitleInelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling
JournalApplied Physics Letters
AuthorsScalise, E.Author
Houssa, M.Author
Pourtois, G.Author
Afanas’ev, V. V.Author
Stesmans, A.Author
Year2011 (September 26)Volume99
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3644158Search in ResearchGate
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Mindat Ref. ID8596205Long-form Identifiermindat:1:5:8596205:7
GUID0
Full ReferenceScalise, E., Houssa, M., Pourtois, G., Afanas’ev, V. V., Stesmans, A. (2011) Inelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling. Applied Physics Letters, 99 (13). 132101pp. doi:10.1063/1.3644158
Plain TextScalise, E., Houssa, M., Pourtois, G., Afanas’ev, V. V., Stesmans, A. (2011) Inelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling. Applied Physics Letters, 99 (13). 132101pp. doi:10.1063/1.3644158
In(2011, September) Applied Physics Letters Vol. 99 (13) AIP Publishing

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Scalise, E., Houssa, M., Pourtois, G., Afanas’ev, V. V., Stesmans, A. (2011) Structural and vibrational properties of amorphous GeO2 from first-principles. Applied Physics Letters, 98 (20). 202110pp. doi:10.1063/1.3593036
Houssa, M., Pourtois, G., Afanas’ev, V. V., Stesmans, A. (2011) First-principles study of Ge dangling bonds in GeO2 and correlation with electron spin resonance at Ge/GeO2 interfaces. Applied Physics Letters, 99 (21). 212103pp. doi:10.1063/1.3662860
Houssa, M., Scalise, E., Sankaran, K., Pourtois, G., Afanas’ev, V. V., Stesmans, A. (2011) Electronic properties of hydrogenated silicene and germanene. Applied Physics Letters, 98 (22). 223107pp. doi:10.1063/1.3595682
Houssa, M., Pourtois, G., Afanas’ev, V. V., Stesmans, A. (2010) Can silicon behave like graphene? A first-principles study. Applied Physics Letters, 97 (11). 112106pp. doi:10.1063/1.3489937
Houssa, M., Pourtois, G., Heyns, M. M., Afanas’ev, V. V., Stesmans, A. (2011) Electronic Properties of Silicene: Insights from First-Principles Modeling. Journal of the Electrochemical Society, 158. doi:10.1149/1.3522774
Houssa, M., Afanas’ev, V. V., Stesmans, A., Pourtois, G., Meuris, M., Heyns, M. M. (2009) First-principles study of the electronic properties of Ge dangling bonds at (100)Si1−xGex/SiO2 interfaces. Applied Physics Letters, 95 (16). 162109pp. doi:10.1063/1.3253707
Houssa, M., Scarrozza, M., Pourtois, G., Afanas’ev, V. V., Stesmans, A. (2011) Universal stress-defect correlation at (100)semiconductor/oxide interfaces. Applied Physics Letters, 98 (14). 141901pp. doi:10.1063/1.3575559
Houssa, M., Pourtois, G., Afanas’ev, V. V., Stesmans, A. (2010) Electronic properties of two-dimensional hexagonal germanium. Applied Physics Letters, 96 (8). 82111pp. doi:10.1063/1.3332588
Houssa, M., Afanas’ev, V. V., Stesmans, A., Heyns, M. M. (2001) Polarity dependence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks. Applied Physics Letters, 79 (19). 3134-3136 doi:10.1063/1.1415401
Houssa, M., Tuominen, M., Naili, M., Afanas’ev, V., Stesmans, A., Haukka, S., Heyns, M. M. (2000) Trap-assisted tunneling in high permittivity gate dielectric stacks. Journal of Applied Physics, 87 (12). 8615-8620 doi:10.1063/1.373587
Houssa, M., Afanas’ev, V. V., Stesmans, A., Heyns, M. M. (2000) Variation in the fixed charge density of SiO[sub x]/ZrO[sub 2] gate dielectric stacks during postdeposition oxidation. Applied Physics Letters, 77 (12). 1885pp. doi:10.1063/1.1310635
 
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