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Tseng, Hsueh-Chih, Chang, Ting-Chang, Huang, Jheng-Jie, Yang, Po-Chun, Chen, Yu-Ting, Jian, Fu-Yen, Sze, S. M., Tsai, Ming-Jinn (2011) Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment. Applied Physics Letters, 99 (13). 132104pp. doi:10.1063/1.3645004

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Reference TypeJournal (article/letter/editorial)
TitleInvestigating the improvement of resistive switching trends after post-forming negative bias stress treatment
JournalApplied Physics Letters
AuthorsTseng, Hsueh-ChihAuthor
Chang, Ting-ChangAuthor
Huang, Jheng-JieAuthor
Yang, Po-ChunAuthor
Chen, Yu-TingAuthor
Jian, Fu-YenAuthor
Sze, S. M.Author
Tsai, Ming-JinnAuthor
Year2011 (September 26)Volume99
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3645004Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8596245Long-form Identifiermindat:1:5:8596245:5
GUID0
Full ReferenceTseng, Hsueh-Chih, Chang, Ting-Chang, Huang, Jheng-Jie, Yang, Po-Chun, Chen, Yu-Ting, Jian, Fu-Yen, Sze, S. M., Tsai, Ming-Jinn (2011) Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment. Applied Physics Letters, 99 (13). 132104pp. doi:10.1063/1.3645004
Plain TextTseng, Hsueh-Chih, Chang, Ting-Chang, Huang, Jheng-Jie, Yang, Po-Chun, Chen, Yu-Ting, Jian, Fu-Yen, Sze, S. M., Tsai, Ming-Jinn (2011) Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment. Applied Physics Letters, 99 (13). 132104pp. doi:10.1063/1.3645004
In(2011, September) Applied Physics Letters Vol. 99 (13) AIP Publishing

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