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Jung, Seungjae, Kong, Jaemin, Song, Sunghoon, Lee, Kwanghee, Lee, Takhee, Hwang, Hyunsang, Jeon, Sanghun (2011) Flexible resistive random access memory using solution-processed TiOx with Al top electrode on Ag layer-inserted indium-zinc-tin-oxide-coated polyethersulfone substrate. Applied Physics Letters, 99 (14). 142110pp. doi:10.1063/1.3621826

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Reference TypeJournal (article/letter/editorial)
TitleFlexible resistive random access memory using solution-processed TiOx with Al top electrode on Ag layer-inserted indium-zinc-tin-oxide-coated polyethersulfone substrate
JournalApplied Physics Letters
AuthorsJung, SeungjaeAuthor
Kong, JaeminAuthor
Song, SunghoonAuthor
Lee, KwangheeAuthor
Lee, TakheeAuthor
Hwang, HyunsangAuthor
Jeon, SanghunAuthor
Year2011 (October 3)Volume99
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.3621826Search in ResearchGate
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Mindat Ref. ID8596285Long-form Identifiermindat:1:5:8596285:3
GUID0
Full ReferenceJung, Seungjae, Kong, Jaemin, Song, Sunghoon, Lee, Kwanghee, Lee, Takhee, Hwang, Hyunsang, Jeon, Sanghun (2011) Flexible resistive random access memory using solution-processed TiOx with Al top electrode on Ag layer-inserted indium-zinc-tin-oxide-coated polyethersulfone substrate. Applied Physics Letters, 99 (14). 142110pp. doi:10.1063/1.3621826
Plain TextJung, Seungjae, Kong, Jaemin, Song, Sunghoon, Lee, Kwanghee, Lee, Takhee, Hwang, Hyunsang, Jeon, Sanghun (2011) Flexible resistive random access memory using solution-processed TiOx with Al top electrode on Ag layer-inserted indium-zinc-tin-oxide-coated polyethersulfone substrate. Applied Physics Letters, 99 (14). 142110pp. doi:10.1063/1.3621826
In(2011, October) Applied Physics Letters Vol. 99 (14) AIP Publishing

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Jung, Seungjae, Kong, Jaemin, Song, Sunghoon, Lee, Kwanghee, Lee, Takhee, Hwang, Hyunsang, Jeon, Sanghun (2010) Resistive Switching Characteristics of Solution-Processed Transparent TiO[sub x] for Nonvolatile Memory Application. Journal of the Electrochemical Society, 157. doi:10.1149/1.3489370
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