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Umeda, T., Esaki, K., Kosugi, R., Fukuda, K., Ohshima, T., Morishita, N., Isoya, J. (2011) Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance. Applied Physics Letters, 99 (14). 142105pp. doi:10.1063/1.3644156

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Reference TypeJournal (article/letter/editorial)
TitleBehavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance
JournalApplied Physics Letters
AuthorsUmeda, T.Author
Esaki, K.Author
Kosugi, R.Author
Fukuda, K.Author
Ohshima, T.Author
Morishita, N.Author
Isoya, J.Author
Year2011 (October 3)Volume99
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.3644156Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8596317Long-form Identifiermindat:1:5:8596317:1
GUID0
Full ReferenceUmeda, T., Esaki, K., Kosugi, R., Fukuda, K., Ohshima, T., Morishita, N., Isoya, J. (2011) Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance. Applied Physics Letters, 99 (14). 142105pp. doi:10.1063/1.3644156
Plain TextUmeda, T., Esaki, K., Kosugi, R., Fukuda, K., Ohshima, T., Morishita, N., Isoya, J. (2011) Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance. Applied Physics Letters, 99 (14). 142105pp. doi:10.1063/1.3644156
In(2011, October) Applied Physics Letters Vol. 99 (14) AIP Publishing

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Umeda, Takahide, Kosugi, Ryouji, Fukuda, Kenji, Morishita, Norio, Ohshima, Takeshi, Esaki, K., Isoya, J. (2012) Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO2 Interfaces. Materials Science Forum, 717. 427-432 doi:10.4028/www.scientific.net/msf.717-720.427
Umeda, T., Esaki, K., Kosugi, Ryouji, Fukuda, Kenji, Morishita, Norio, Ohshima, Takeshi, Isoya, Junichi (2011) Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor. Materials Science Forum, 679. 370-373 doi:10.4028/www.scientific.net/msf.679-680.370
Umeda, T., Isoya, J., Ohshima, T., Onoda, S., Morishita, N., Okonogi, K., Shiratake, S. (2010) Fluorine-vacancy defects in fluorine-implanted silicon studied by electron paramagnetic resonance. Applied Physics Letters, 97 (4). 41911pp. doi:10.1063/1.3473763
Kosugi, R., Umeda, T., Sakuma, Y. (2011) Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interface trap density. Applied Physics Letters, 99 (18). 182111pp. doi:10.1063/1.3659689
Umeda, T., Kagoyama, Y., Tomita, K., Abe, Y., Sometani, M., Okamoto, M., Harada, S., Hatakeyama, T. (2019) Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(000 1 ¯)/SiO2 interfaces with wet oxidation. Applied Physics Letters, 115 (15). 151602pp. doi:10.1063/1.5116170
Umeda, T., Nakano, Y., Higa, E., Okuda, T., Kimoto, T., Hosoi, T., Watanabe, H., Sometani, M., Harada, S. (2020) Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4H-SiC(0001)/SiO2 interfaces. Journal of Applied Physics, 127 (14) 145301pp. doi:10.1063/1.5134648
Umeda, T., Son, N. T., Isoya, J., Janzén, E., Ohshima, T., Morishita, N., Itoh, H., Gali, A., Bockstedte, M. (2006) Identification of the Carbon Antisite-Vacancy Pair in4H-SiC. Physical Review Letters, 96 (14). doi:10.1103/physrevlett.96.145501
Higa, E., Sometani, M., Hirai, H., Yano, H., Harada, S., Umeda, T. (2020) Electrically detected magnetic resonance study on interface defects at nitrided Si-face, a-face, and m-face 4H-SiC/SiO2 interfaces. Applied Physics Letters, 116 (17) 171602pp. doi:10.1063/5.0002944
Uejima, K., Umeda, T. (2014) Microscopic origins of dry-etching damages in silicon large-scaled integrated circuits revealed by electrically detected magnetic resonance. Applied Physics Letters, 104 (8). 82111pp. doi:10.1063/1.4867070
Umeda, T., Isoya, J., Morishita, N., Ohshima, T., Kamiya, T. (2004) EPR identification of two types of carbon vacancies in4H−SiC. Physical Review B, 69 (12) doi:10.1103/physrevb.69.121201
Son, N. T., Carlsson, P., ul Hassan, J., Janzén, E., Umeda, T., Isoya, J., Gali, A., Bockstedte, M., Morishita, N., Ohshima, T., Itoh, H. (2006) Divacancy in 4H-SiC. Physical Review Letters, 96 (5). doi:10.1103/physrevlett.96.055501
 
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