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Niu, Chengwang, Dai, Ying, Yu, Lin, Guo, Meng, Ma, Yandong, Huang, Baibiao (2011) Quantum anomalous Hall effect in doped ternary chalcogenide topological insulators TlBiTe2 and TlBiSe2. Applied Physics Letters, 99 (14). 142502pp. doi:10.1063/1.3645624

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Reference TypeJournal (article/letter/editorial)
TitleQuantum anomalous Hall effect in doped ternary chalcogenide topological insulators TlBiTe2 and TlBiSe2
JournalApplied Physics Letters
AuthorsNiu, ChengwangAuthor
Dai, YingAuthor
Yu, LinAuthor
Guo, MengAuthor
Ma, YandongAuthor
Huang, BaibiaoAuthor
Year2011 (October 3)Volume99
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.3645624Search in ResearchGate
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Mindat Ref. ID8596358Long-form Identifiermindat:1:5:8596358:8
GUID0
Full ReferenceNiu, Chengwang, Dai, Ying, Yu, Lin, Guo, Meng, Ma, Yandong, Huang, Baibiao (2011) Quantum anomalous Hall effect in doped ternary chalcogenide topological insulators TlBiTe2 and TlBiSe2. Applied Physics Letters, 99 (14). 142502pp. doi:10.1063/1.3645624
Plain TextNiu, Chengwang, Dai, Ying, Yu, Lin, Guo, Meng, Ma, Yandong, Huang, Baibiao (2011) Quantum anomalous Hall effect in doped ternary chalcogenide topological insulators TlBiTe2 and TlBiSe2. Applied Physics Letters, 99 (14). 142502pp. doi:10.1063/1.3645624
In(2011, October) Applied Physics Letters Vol. 99 (14) AIP Publishing

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