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Vincent, B., Gencarelli, F., Bender, H., Merckling, C., Douhard, B., Petersen, D. H., Hansen, O., Henrichsen, H. H., Meersschaut, J., Vandervorst, W., Heyns, M., Loo, R., Caymax, M. (2011) Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition. Applied Physics Letters, 99 (15). 152103pp. doi:10.1063/1.3645620

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Reference TypeJournal (article/letter/editorial)
TitleUndoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
JournalApplied Physics Letters
AuthorsVincent, B.Author
Gencarelli, F.Author
Bender, H.Author
Merckling, C.Author
Douhard, B.Author
Petersen, D. H.Author
Hansen, O.Author
Henrichsen, H. H.Author
Meersschaut, J.Author
Vandervorst, W.Author
Heyns, M.Author
Loo, R.Author
Caymax, M.Author
Year2011 (October 10)Volume99
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.3645620Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8596519Long-form Identifiermindat:1:5:8596519:7
GUID0
Full ReferenceVincent, B., Gencarelli, F., Bender, H., Merckling, C., Douhard, B., Petersen, D. H., Hansen, O., Henrichsen, H. H., Meersschaut, J., Vandervorst, W., Heyns, M., Loo, R., Caymax, M. (2011) Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition. Applied Physics Letters, 99 (15). 152103pp. doi:10.1063/1.3645620
Plain TextVincent, B., Gencarelli, F., Bender, H., Merckling, C., Douhard, B., Petersen, D. H., Hansen, O., Henrichsen, H. H., Meersschaut, J., Vandervorst, W., Heyns, M., Loo, R., Caymax, M. (2011) Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition. Applied Physics Letters, 99 (15). 152103pp. doi:10.1063/1.3645620
In(2011, October) Applied Physics Letters Vol. 99 (15) AIP Publishing

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Vincent, B., Vandervorst, W., Caymax, M., Loo, R. (2009) Influence of Si precursor on Ge segregation during ultrathin Si reduced pressure chemical vapor deposition on Ge. Applied Physics Letters, 95 (26). 262112pp. doi:10.1063/1.3280075
Wang, G., Rosseel, E., Loo, R., Favia, P., Bender, H., Caymax, M., Heyns, M. M., Vandervorst, W. (2010) High quality Ge epitaxial layers in narrow channels on Si (001) substrates. Applied Physics Letters, 96 (11). 111903pp. doi:10.1063/1.3360231
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Wang, G., Rosseel, E., Loo, R., Favia, P., Bender, H., Caymax, M., Heyns, M. M., Vandervorst, W. (2010) Ge instability and the growth of Ge epitaxial layers in nanochannels on patterned Si (001) substrates. Journal of Applied Physics, 108 (12). 123517pp. doi:10.1063/1.3525982
Vincent, B., Firrincieli, A., Wang, W.-E., Waldron, N., Franquet, A., Douhard, B., Vandervorst, W., Clarysse, T., Brammertz, G., Loo, R., Dekoster, J., Meuris, M., Caymax, M. (2011) Ge Chemical Vapor Deposition on GaAs for Low Resistivity Contacts. Journal of the Electrochemical Society, 158. doi:10.1149/1.3528273
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Loo, R., Meunier-Beillard, P., Vanhaeren, D., Bender, H., Caymax, M., Vandervorst, W., Dentel, D., Goryll, M., Vescan, L. (2001) Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor. Journal of Applied Physics, 90 (5). 2565-2574 doi:10.1063/1.1389335
Groven, B., Claes, D., Nalin Mehta, A., Bender, H., Vandervorst, W., Heyns, M., Caymax, M., Radu, I., Delabie, A. (2019) Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature. The Journal of Chemical Physics, 150 (10). 104703pp. doi:10.1063/1.5048346
Gupta, S., Shimura, Y., Richard, O., Douhard, B., Simoen, E., Bender, H., Nakatsuka, O., Zaima, S., Loo, R., Heyns, M. (2018) Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si. Applied Physics Letters, 113 (19). 192103pp. doi:10.1063/1.5048683
Chou, H.-Y., Afanas'ev, V. V., Houssa, M., Stesmans, A., Vincent, B., Gencarelli, F., Shimura, Y., Merckling, C., Loo, R., Nakatsuka, O., Zaima, S. (2014) Band alignment at interfaces of amorphous Al2O3 with Ge1−xSnx- and strained Ge-based channels. Applied Physics Letters, 104 (20). 202107pp. doi:10.1063/1.4878558
 
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