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Lee, Sejoon, Song, Emil B., Kim, Sungmin, Seo, David H., Seo, Sunae, Won Kang, Tae, Wang, Kang L. (2012) Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices. Applied Physics Letters, 100 (2). 23109pp. doi:10.1063/1.3675633

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Reference TypeJournal (article/letter/editorial)
TitleImpact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices
JournalApplied Physics Letters
AuthorsLee, SejoonAuthor
Song, Emil B.Author
Kim, SungminAuthor
Seo, David H.Author
Seo, SunaeAuthor
Won Kang, TaeAuthor
Wang, Kang L.Author
Year2012 (January 9)Volume100
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.3675633Search in ResearchGate
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Mindat Ref. ID8602181Long-form Identifiermindat:1:5:8602181:6
GUID0
Full ReferenceLee, Sejoon, Song, Emil B., Kim, Sungmin, Seo, David H., Seo, Sunae, Won Kang, Tae, Wang, Kang L. (2012) Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices. Applied Physics Letters, 100 (2). 23109pp. doi:10.1063/1.3675633
Plain TextLee, Sejoon, Song, Emil B., Kim, Sungmin, Seo, David H., Seo, Sunae, Won Kang, Tae, Wang, Kang L. (2012) Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices. Applied Physics Letters, 100 (2). 23109pp. doi:10.1063/1.3675633
In(2012, January) Applied Physics Letters Vol. 100 (2) AIP Publishing

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