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Zhou, Yurong, Liu, Fengzhen, Zhu, Meifang, Song, Xiaohui, Zhang, Ping (2013) Insulator-to-metal transition in heavily Ti-doped silicon thin film. Applied Physics Letters, 102 (22). 222106pp. doi:10.1063/1.4809822

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Reference TypeJournal (article/letter/editorial)
TitleInsulator-to-metal transition in heavily Ti-doped silicon thin film
JournalApplied Physics Letters
AuthorsZhou, YurongAuthor
Liu, FengzhenAuthor
Zhu, MeifangAuthor
Song, XiaohuiAuthor
Zhang, PingAuthor
Year2013 (June 3)Volume102
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.4809822Search in ResearchGate
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Mindat Ref. ID8613616Long-form Identifiermindat:1:5:8613616:3
GUID0
Full ReferenceZhou, Yurong, Liu, Fengzhen, Zhu, Meifang, Song, Xiaohui, Zhang, Ping (2013) Insulator-to-metal transition in heavily Ti-doped silicon thin film. Applied Physics Letters, 102 (22). 222106pp. doi:10.1063/1.4809822
Plain TextZhou, Yurong, Liu, Fengzhen, Zhu, Meifang, Song, Xiaohui, Zhang, Ping (2013) Insulator-to-metal transition in heavily Ti-doped silicon thin film. Applied Physics Letters, 102 (22). 222106pp. doi:10.1063/1.4809822
In(2013, June) Applied Physics Letters Vol. 102 (22) AIP Publishing

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