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Voss, L. F., Murphy, J. W., Shao, Q., Henderson, R. A., Frye, C. D., Stoyer, M. A., Nikolic, R. J. (2018) Selenium-iodide: A low melting point eutectic semiconductor. Applied Physics Letters, 113 (24). 242103pp. doi:10.1063/1.5060269

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Reference TypeJournal (article/letter/editorial)
TitleSelenium-iodide: A low melting point eutectic semiconductor
JournalApplied Physics Letters
AuthorsVoss, L. F.Author
Murphy, J. W.Author
Shao, Q.Author
Henderson, R. A.Author
Frye, C. D.Author
Stoyer, M. A.Author
Nikolic, R. J.Author
Year2018 (December 10)Volume113
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.5060269Search in ResearchGate
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Mindat Ref. ID8654886Long-form Identifiermindat:1:5:8654886:3
GUID0
Full ReferenceVoss, L. F., Murphy, J. W., Shao, Q., Henderson, R. A., Frye, C. D., Stoyer, M. A., Nikolic, R. J. (2018) Selenium-iodide: A low melting point eutectic semiconductor. Applied Physics Letters, 113 (24). 242103pp. doi:10.1063/1.5060269
Plain TextVoss, L. F., Murphy, J. W., Shao, Q., Henderson, R. A., Frye, C. D., Stoyer, M. A., Nikolic, R. J. (2018) Selenium-iodide: A low melting point eutectic semiconductor. Applied Physics Letters, 113 (24). 242103pp. doi:10.1063/1.5060269
In(2018, December) Applied Physics Letters Vol. 113 (24) AIP Publishing

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