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Gong, Wentao, Li, Liang, Gong, Penglai, Zhou, Yulan, Zhang, Zhitao, Zhou, Weichang, Wang, Weike, Liu, Ziran, Tang, Dongsheng (2019) Raman investigation of layered ZrGeTe4 semiconductor. Applied Physics Letters, 114 (17). 172104pp. doi:10.1063/1.5087778

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Reference TypeJournal (article/letter/editorial)
TitleRaman investigation of layered ZrGeTe4 semiconductor
JournalApplied Physics Letters
AuthorsGong, WentaoAuthor
Li, LiangAuthor
Gong, PenglaiAuthor
Zhou, YulanAuthor
Zhang, ZhitaoAuthor
Zhou, WeichangAuthor
Wang, WeikeAuthor
Liu, ZiranAuthor
Tang, DongshengAuthor
Year2019 (April 29)Volume114
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.5087778Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8656438Long-form Identifiermindat:1:5:8656438:4
GUID0
Full ReferenceGong, Wentao, Li, Liang, Gong, Penglai, Zhou, Yulan, Zhang, Zhitao, Zhou, Weichang, Wang, Weike, Liu, Ziran, Tang, Dongsheng (2019) Raman investigation of layered ZrGeTe4 semiconductor. Applied Physics Letters, 114 (17). 172104pp. doi:10.1063/1.5087778
Plain TextGong, Wentao, Li, Liang, Gong, Penglai, Zhou, Yulan, Zhang, Zhitao, Zhou, Weichang, Wang, Weike, Liu, Ziran, Tang, Dongsheng (2019) Raman investigation of layered ZrGeTe4 semiconductor. Applied Physics Letters, 114 (17). 172104pp. doi:10.1063/1.5087778
In(2019, April) Applied Physics Letters Vol. 114 (17) AIP Publishing


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