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Concordel, Alexandre, Jacopin, Gwénolé, Gayral, Bruno, Garro, Núria, Cros, Ana, Rouvière, Jean-Luc, Daudin, Bruno (2019) Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 114 (17). 172101pp. doi:10.1063/1.5094627

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Reference TypeJournal (article/letter/editorial)
TitlePolarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy
JournalApplied Physics Letters
AuthorsConcordel, AlexandreAuthor
Jacopin, GwénoléAuthor
Gayral, BrunoAuthor
Garro, NúriaAuthor
Cros, AnaAuthor
Rouvière, Jean-LucAuthor
Daudin, BrunoAuthor
Year2019 (April 29)Volume114
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.5094627Search in ResearchGate
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Mindat Ref. ID8656490Long-form Identifiermindat:1:5:8656490:4
GUID0
Full ReferenceConcordel, Alexandre, Jacopin, Gwénolé, Gayral, Bruno, Garro, Núria, Cros, Ana, Rouvière, Jean-Luc, Daudin, Bruno (2019) Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 114 (17). 172101pp. doi:10.1063/1.5094627
Plain TextConcordel, Alexandre, Jacopin, Gwénolé, Gayral, Bruno, Garro, Núria, Cros, Ana, Rouvière, Jean-Luc, Daudin, Bruno (2019) Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 114 (17). 172101pp. doi:10.1063/1.5094627
In(2019, April) Applied Physics Letters Vol. 114 (17) AIP Publishing

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Guérin, Corentin; Jourdan, Fabien; Moreau, Bérangère; Gayral, Bruno; Rouvière, Jean-Luc; Jacopin, Gwénolé; Daudin, Bruno (2025) Wurtzite vs zinc blende phase selection in GaN nanowires. Journal of Applied Physics, 138 (3). doi:10.1063/5.0279475
Guérin, Corentin; Jourdan, Fabien; Rouvière, Jean-Luc; Gayral, Bruno; Jacopin, Gwénolé; Daudin, Bruno (2025) Optical properties of basal plane stacking faults in AlN nanowires. Journal of Applied Physics, 137 (17). doi:10.1063/5.0252320
Vermeersch, Rémy, Robin, Eric, Cros, Ana, Jacopin, Gwénolé, Daudin, Bruno, Pernot, Julien (2021) Shallow donor and DX state in Si doped AlN nanowires grown by molecular beam epitaxy. Applied Physics Letters, 119 (26) 262105pp. doi:10.1063/5.0074454
Vermeersch, Rémy, Jacopin, Gwénolé, Robin, Eric, Pernot, Julien, Gayral, Bruno, Daudin, Bruno (2023) Optical properties of Ga-doped AlN nanowires. Applied Physics Letters, 122 (9) 91106 doi:10.1063/5.0137424
Auzelle, Thomas, Haas, Benedikt, Den Hertog, Martien, Rouvière, Jean-Luc, Daudin, Bruno, Gayral, Bruno (2015) Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries. Applied Physics Letters, 107 (5). 51904pp. doi:10.1063/1.4927826
Auzelle, Thomas, Haas, Benedikt, Minj, Albert, Bougerol, Catherine, Rouvière, Jean-Luc, Cros, Ana, Colchero, Jaime, Daudin, Bruno (2015) The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires. Journal of Applied Physics, 117 (24). 245303pp. doi:10.1063/1.4923024
Mata, Rafael, Hestroffer, Karine, Budagosky, Jorge, Cros, Ana, Bougerol, Catherine, Renevier, Hubert, Daudin, Bruno (2011) Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature. Journal of Crystal Growth, 334 (1). 177-180 doi:10.1016/j.jcrysgro.2011.08.015
Hestroffer, Karine, Leclere, Cédric, Bougerol, Catherine, Renevier, Hubert, Daudin, Bruno (2011) Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111) Physical Review B, 84 (24) doi:10.1103/physrevb.84.245302
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Vermeersch, Rémy, Jacopin, Gwénolé, Daudin, Bruno, Pernot, Julien (2022) DX center formation in highly Si doped AlN nanowires revealed by trap assisted space-charge limited current. Applied Physics Letters, 120 (16) 162104 doi:10.1063/5.0087789
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