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Chen, Zhiliang, Zhang, Yating, Yu, Yu, Cao, Mingxuan, Che, Yongli, Jin, Lufan, Li, Yifan, Li, Qingyan, Li, Tengteng, Dai, Haitao, Yang, Junbo, Yao, Jianquan (2019) Light assisted multilevel resistive switching memory devices based on all-inorganic perovskite quantum dots. Applied Physics Letters, 114 (18). 181103pp. doi:10.1063/1.5087594

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Reference TypeJournal (article/letter/editorial)
TitleLight assisted multilevel resistive switching memory devices based on all-inorganic perovskite quantum dots
JournalApplied Physics Letters
AuthorsChen, ZhiliangAuthor
Zhang, YatingAuthor
Yu, YuAuthor
Cao, MingxuanAuthor
Che, YongliAuthor
Jin, LufanAuthor
Li, YifanAuthor
Li, QingyanAuthor
Li, TengtengAuthor
Dai, HaitaoAuthor
Yang, JunboAuthor
Yao, JianquanAuthor
Year2019 (May 6)Volume114
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.5087594Search in ResearchGate
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Mindat Ref. ID8656507Long-form Identifiermindat:1:5:8656507:3
GUID0
Full ReferenceChen, Zhiliang, Zhang, Yating, Yu, Yu, Cao, Mingxuan, Che, Yongli, Jin, Lufan, Li, Yifan, Li, Qingyan, Li, Tengteng, Dai, Haitao, Yang, Junbo, Yao, Jianquan (2019) Light assisted multilevel resistive switching memory devices based on all-inorganic perovskite quantum dots. Applied Physics Letters, 114 (18). 181103pp. doi:10.1063/1.5087594
Plain TextChen, Zhiliang, Zhang, Yating, Yu, Yu, Cao, Mingxuan, Che, Yongli, Jin, Lufan, Li, Yifan, Li, Qingyan, Li, Tengteng, Dai, Haitao, Yang, Junbo, Yao, Jianquan (2019) Light assisted multilevel resistive switching memory devices based on all-inorganic perovskite quantum dots. Applied Physics Letters, 114 (18). 181103pp. doi:10.1063/1.5087594
In(2019, May) Applied Physics Letters Vol. 114 (18) AIP Publishing

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