Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Zhang, Zhen Fei, Gao, Hai Xia, Yang, Mei, Jiang, Peng Fei, Ma, Xiao Hua, Yang, Yin Tang (2019) Effect of thickness of metal electrode on the performance of SiNx-based resistive switching devices. Applied Physics Letters, 114 (4). 42102pp. doi:10.1063/1.5062597

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleEffect of thickness of metal electrode on the performance of SiNx-based resistive switching devices
JournalApplied Physics Letters
AuthorsZhang, Zhen FeiAuthor
Gao, Hai XiaAuthor
Yang, MeiAuthor
Jiang, Peng FeiAuthor
Ma, Xiao HuaAuthor
Yang, Yin TangAuthor
Year2019 (January 28)Volume114
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.5062597Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8657415Long-form Identifiermindat:1:5:8657415:0
GUID0
Full ReferenceZhang, Zhen Fei, Gao, Hai Xia, Yang, Mei, Jiang, Peng Fei, Ma, Xiao Hua, Yang, Yin Tang (2019) Effect of thickness of metal electrode on the performance of SiNx-based resistive switching devices. Applied Physics Letters, 114 (4). 42102pp. doi:10.1063/1.5062597
Plain TextZhang, Zhen Fei, Gao, Hai Xia, Yang, Mei, Jiang, Peng Fei, Ma, Xiao Hua, Yang, Yin Tang (2019) Effect of thickness of metal electrode on the performance of SiNx-based resistive switching devices. Applied Physics Letters, 114 (4). 42102pp. doi:10.1063/1.5062597
In(2019, January) Applied Physics Letters Vol. 114 (4) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Gao, Hai Xia, Jiang, Peng Fei, Zhang, Zhen Fei, Yang, Mei, Ma, Xiao Hua, Yang, Yin Tang (2018) Influence of Nitrogen Concentration on Self-Compliance Resistive Switching in Ta/SiNx /Pt RRAM Devices. physica status solidi (a), 215 (14). 1800201pp. doi:10.1002/pssa.201800201
Yang, Mei, Wang, Hong, Ma, Xiaohua, Gao, Haixia, Wang, Bin (2017) Effect of nitrogen-accommodation ability of electrodes in SiNx-based resistive switching devices. Applied Physics Letters, 111 (23). 233510pp. doi:10.1063/1.4996618
Duan, Yiwei, Gao, Haixia, Qian, Mengyi, Sun, Yuxin, Wu, Shuliang, Guo, Jingshu, Yang, Mei, Ma, Xiaohua, Yang, Yintang (2022) Influence of non-inert electrode thickness on the performance of complementary resistive switching in AlOxNy-based RRAM. Applied Physics Letters, 121 (7) 73502 doi:10.1063/5.0102030
Zhou, Ziliang, Yang, Mei, Fu, Zhen, Wang, Hong, Ma, Xiaohua, Gao, Haixia (2020) Electrode-induced polarity conversion in Nb2O5/NbOx resistive switching devices. Applied Physics Letters, 117 (24) 243502pp. doi:10.1063/5.0020501
Qian, Mengyi, Gao, Haixia, Duan, Yiwei, Guo, Jingshu, Bai, Yifan, Zhu, Shilong, Ma, Xiaohua, Yang, Yintang (2023) Effect of the bottom electrode on the digital and analog resistive switching behavior of SiNx-based RRAM. Applied Physics Letters, 123 (3) AIP Publishing. doi:10.1063/5.0155262
Gao, Xu, Xia, Yidong, Ji, Jianfeng, Xu, Hanni, Su, Yi, Li, Haitao, Yang, Chunjun, Guo, Hongxuan, Yin, Jiang, Liu, Zhiguo (2010) Effect of top electrode materials on bipolar resistive switching behavior of gallium oxide films. Applied Physics Letters, 97 (19). 193501pp. doi:10.1063/1.3501967
Gao, Leiwen, Song, Zhongxiao, Li, Yanhuai, Ma, Fei (2019) Switching failure behaviors and doping enhanced performances of Ni/Al2O3/p+Si resistive switching devices. Journal of Applied Physics, 125 (24). 245306pp. doi:10.1063/1.5100101
Gao, Haixia, Zhao, Yang, Zhu, Shilong, Qiu, Xuan, Wang, Rui, Guo, Jingli, Ma, Xiaohua, Yang, Yintang (2024) Coexistence of analog and digital resistive switching behaviors in TiN/SiNx resistive random access memory device. Applied Physics Letters, 125 (21). doi:10.1063/5.0232217
Chen, Na, Wang, Di, Guan, Peng Fei, Bai, Hai Yang, Wang, Wei Hua, Zhang, Zheng Jun, Hahn, Horst, Gleiter, Herbert (2019) Direct observation of fast surface dynamics in sub-10-nm nanoglass particles. Applied Physics Letters, 114 (4). 43103pp. doi:10.1063/1.5052016
Ma, Ya-Fei; Zhang, Zi-Zhen; Zhang, Mei-Li; Ren, Yi-Xia; Wang, Ji-Jiang; Yang, Xiao-Gang (2025) Study on synthesis of Zn-MOF@CM6, artificial light capture system and photoelectric conversion performance. Journal of Molecular Structure, 1343. doi:10.1016/j.molstruc.2025.142909
Ma, Ya-Fei, Zhang, Mei-Li, Ren, Yi-Xia, Wang, Ji-Jiang, Yang, Xiao-Gang (2025) Construction and electrochemical sensing performance of MOFs based on flexible phenyldiacetic acid. Journal of Molecular Structure, 1322. doi:10.1016/j.molstruc.2024.140544
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 21, 2025 06:26:28
Go to top of page