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Zhang, Yuewei, Mauze, Akhil, Speck, James S. (2019) Anisotropic etching of β-Ga2O3 using hot phosphoric acid. Applied Physics Letters, 115 (1). 13501pp. doi:10.1063/1.5093188

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Reference TypeJournal (article/letter/editorial)
TitleAnisotropic etching of β-Ga2O3 using hot phosphoric acid
JournalApplied Physics Letters
AuthorsZhang, YueweiAuthor
Mauze, AkhilAuthor
Speck, James S.Author
Year2019 (July)Volume115
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.5093188Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8657939Long-form Identifiermindat:1:5:8657939:5
GUID0
Full ReferenceZhang, Yuewei, Mauze, Akhil, Speck, James S. (2019) Anisotropic etching of β-Ga2O3 using hot phosphoric acid. Applied Physics Letters, 115 (1). 13501pp. doi:10.1063/1.5093188
Plain TextZhang, Yuewei, Mauze, Akhil, Speck, James S. (2019) Anisotropic etching of β-Ga2O3 using hot phosphoric acid. Applied Physics Letters, 115 (1). 13501pp. doi:10.1063/1.5093188
In(2019, July) Applied Physics Letters Vol. 115 (1) AIP Publishing

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