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(2019) Characterization of Ge ions implantation in Sb2Te3 thin films for high speed phase change memory application. Applied Physics Letters, 115 (10). 103105pp. doi:10.1063/1.5109178

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of Ge ions implantation in Sb2Te3 thin films for high speed phase change memory application
JournalApplied Physics Letters
Year2019 (September 2)Volume115
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.5109178Search in ResearchGate
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Mindat Ref. ID8658003Long-form Identifiermindat:1:5:8658003:6
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Full Reference(2019) Characterization of Ge ions implantation in Sb2Te3 thin films for high speed phase change memory application. Applied Physics Letters, 115 (10). 103105pp. doi:10.1063/1.5109178
Plain Text(2019) Characterization of Ge ions implantation in Sb2Te3 thin films for high speed phase change memory application. Applied Physics Letters, 115 (10). 103105pp. doi:10.1063/1.5109178
In(2019, September) Applied Physics Letters Vol. 115 (10) AIP Publishing

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Hu, Yifeng, Feng, Xiaoyi, Li, Simian, Lai, Tianshu, Song, Sannian, Song, Zhitang, Zhai, Jiwei (2013) Superlattice-like Sb50Se50/Ga30Sb70 thin films for high-speed and high density phase change memory application. Applied Physics Letters, 103 (15). 152107pp. doi:10.1063/1.4824472
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Gu, Yifeng, Song, Sannian, Song, Zhitang, Bai, Suyuan, Cheng, Yan, Zhang, Zhonghua, Liu, Bo, Feng, Songlin (2013) Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory. Applied Physics Letters, 102 (10). 103110pp. doi:10.1063/1.4795595
Wang, Changzhou, Zhai, Jiwei, Song, Zhitang, Shang, Fei, Yao, Xi (2010) Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application. Applied Surface Science, 257. 949-953 doi:10.1016/j.apsusc.2010.07.099
Wei, Fenfen, Wang, Long, Kong, Tao, Shi, Lin, Huang, Rong, Zhang, Jie, Cheng, Guosheng (2013) Amorphous thermal stability of Al-doped Sb2Te3 films for phase-change memory application. Applied Physics Letters, 103 (18). 181908pp. doi:10.1063/1.4827815
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