Reference Type | Journal (article/letter/editorial) |
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Title | Computational study of anisotropic epitaxial recrystallization in 4H-SiC |
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Journal | Journal of Physics: Condensed Matter |
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Authors | Gao, F | Author |
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Zhang, Y | Author |
Posselt, M | Author |
Weber, W J | Author |
Year | 2008 (March 26) | Volume | 20 |
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Issue | 12 |
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Publisher | IOP Publishing |
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DOI | doi:10.1088/0953-8984/20/12/125203Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8708107 | Long-form Identifier | mindat:1:5:8708107:3 |
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GUID | 0 |
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Full Reference | Gao, F, Zhang, Y, Posselt, M, Weber, W J (2008) Computational study of anisotropic epitaxial recrystallization in 4H-SiC. Journal of Physics: Condensed Matter, 20 (12). 125203pp. doi:10.1088/0953-8984/20/12/125203 |
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Plain Text | Gao, F, Zhang, Y, Posselt, M, Weber, W J (2008) Computational study of anisotropic epitaxial recrystallization in 4H-SiC. Journal of Physics: Condensed Matter, 20 (12). 125203pp. doi:10.1088/0953-8984/20/12/125203 |
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In | (2008, March) Journal of Physics: Condensed Matter Vol. 20 (12) IOP Publishing |
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