| Reference Type | Journal (article/letter/editorial) |
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| Title | Peaked structure appearing in the field effect mobility of silicon MOS devices at liquid helium temperatures |
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| Journal | Journal of Physics C: Solid State Physics |
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| Authors | Tidey, R J | Author |
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| Stradling, R A | Author |
| Pepper, M | Author |
| Year | 1974 (October 7) | Volume | 7 |
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| Issue | 19 |
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| Publisher | IOP Publishing |
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| DOI | doi:10.1088/0022-3719/7/19/001Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 8889443 | Long-form Identifier | mindat:1:5:8889443:8 |
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|
| GUID | 0 |
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| Full Reference | Tidey, R J, Stradling, R A, Pepper, M (1974) Peaked structure appearing in the field effect mobility of silicon MOS devices at liquid helium temperatures. Journal of Physics C: Solid State Physics, 7 (19). doi:10.1088/0022-3719/7/19/001 |
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| Plain Text | Tidey, R J, Stradling, R A, Pepper, M (1974) Peaked structure appearing in the field effect mobility of silicon MOS devices at liquid helium temperatures. Journal of Physics C: Solid State Physics, 7 (19). doi:10.1088/0022-3719/7/19/001 |
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| In | (1974, October) Journal of Physics C: Solid State Physics Vol. 7 (19) IOP Publishing |
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