| Reference Type | Journal (article/letter/editorial) |
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| Title | On the origin of bound exciton lines in indium phosphide and gallium arsenide |
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| Journal | Journal of Physics C: Solid State Physics |
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| Authors | White, A M | Author |
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| Dean, P J | Author |
| Day, B | Author |
| Year | 1974 (April 7) | Volume | 7 |
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| Issue | 7 |
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| Publisher | IOP Publishing |
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| DOI | doi:10.1088/0022-3719/7/7/031Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 8889727 | Long-form Identifier | mindat:1:5:8889727:7 |
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| GUID | 0 |
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| Full Reference | White, A M, Dean, P J, Day, B (1974) On the origin of bound exciton lines in indium phosphide and gallium arsenide. Journal of Physics C: Solid State Physics, 7 (7). 1400-1411 doi:10.1088/0022-3719/7/7/031 |
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| Plain Text | White, A M, Dean, P J, Day, B (1974) On the origin of bound exciton lines in indium phosphide and gallium arsenide. Journal of Physics C: Solid State Physics, 7 (7). 1400-1411 doi:10.1088/0022-3719/7/7/031 |
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| In | (1974, April) Journal of Physics C: Solid State Physics Vol. 7 (7) IOP Publishing |
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