Gold, A (1982) Temperature-dependent conductivity of (100) silicon inversion layer. Journal of Physics C: Solid State Physics, 15 (24). doi:10.1088/0022-3719/15/24/003
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Temperature-dependent conductivity of (100) silicon inversion layer | ||
| Journal | Journal of Physics C: Solid State Physics | ||
| Authors | Gold, A | Author | |
| Year | 1982 (August 30) | Volume | 15 |
| Issue | 24 | ||
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/0022-3719/15/24/003Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8894927 | Long-form Identifier | mindat:1:5:8894927:9 |
| GUID | 0 | ||
| Full Reference | Gold, A (1982) Temperature-dependent conductivity of (100) silicon inversion layer. Journal of Physics C: Solid State Physics, 15 (24). doi:10.1088/0022-3719/15/24/003 | ||
| Plain Text | Gold, A (1982) Temperature-dependent conductivity of (100) silicon inversion layer. Journal of Physics C: Solid State Physics, 15 (24). doi:10.1088/0022-3719/15/24/003 | ||
| In | (1982, August) Journal of Physics C: Solid State Physics Vol. 15 (24) IOP Publishing | ||
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