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Matulis, A., Fjærestad, J. O., Chao, K. A. (1997) Electron Interaction in a Quantum Dot with Hard Wall Confinement Potential. International Journal of Modern Physics B, 11 (8). 1035-1049 doi:10.1142/s0217979297000538

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Reference TypeJournal (article/letter/editorial)
TitleElectron Interaction in a Quantum Dot with Hard Wall Confinement Potential
JournalInternational Journal of Modern Physics B
AuthorsMatulis, A.Author
Fjærestad, J. O.Author
Chao, K. A.Author
Year1997 (March 30)Volume11
Issue8
PublisherWorld Scientific Pub Co Pte Lt
DOIdoi:10.1142/s0217979297000538Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8902534Long-form Identifiermindat:1:5:8902534:5
GUID0
Full ReferenceMatulis, A., Fjærestad, J. O., Chao, K. A. (1997) Electron Interaction in a Quantum Dot with Hard Wall Confinement Potential. International Journal of Modern Physics B, 11 (8). 1035-1049 doi:10.1142/s0217979297000538
Plain TextMatulis, A., Fjærestad, J. O., Chao, K. A. (1997) Electron Interaction in a Quantum Dot with Hard Wall Confinement Potential. International Journal of Modern Physics B, 11 (8). 1035-1049 doi:10.1142/s0217979297000538
In(1997, March) International Journal of Modern Physics B Vol. 11 (8) World Scientific Pub Co Pte Lt

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ALIOV, M. K., SABUR, A. R. (2010) FORMATION OF A NOVEL HARD BINARY SiO2/QUANTUM DOT NANOCOMPOSITE WITH PREDICTABLE ELECTRICAL CONDUCTIVITY. Modern Physics Letters B, 24. 89-96 doi:10.1142/s0217984910022196
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