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Li, Pei-Cheng, Mei, Guang-Hui, Hu, Guang-Xi, Wang, Ling-Li, Liu, Ran, Tang, Ting-Ao (2012) Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study. Communications in Theoretical Physics, 58 (1). 171-174 doi:10.1088/0253-6102/58/1/24

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Reference TypeJournal (article/letter/editorial)
TitleEffects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study
JournalCommunications in Theoretical Physics
AuthorsLi, Pei-ChengAuthor
Mei, Guang-HuiAuthor
Hu, Guang-XiAuthor
Wang, Ling-LiAuthor
Liu, RanAuthor
Tang, Ting-AoAuthor
Year2012 (July)Volume58
Issue1
PublisherIOP Publishing
DOIdoi:10.1088/0253-6102/58/1/24Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8977196Long-form Identifiermindat:1:5:8977196:7
GUID0
Full ReferenceLi, Pei-Cheng, Mei, Guang-Hui, Hu, Guang-Xi, Wang, Ling-Li, Liu, Ran, Tang, Ting-Ao (2012) Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study. Communications in Theoretical Physics, 58 (1). 171-174 doi:10.1088/0253-6102/58/1/24
Plain TextLi, Pei-Cheng, Mei, Guang-Hui, Hu, Guang-Xi, Wang, Ling-Li, Liu, Ran, Tang, Ting-Ao (2012) Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study. Communications in Theoretical Physics, 58 (1). 171-174 doi:10.1088/0253-6102/58/1/24
In(2012, July) Communications in Theoretical Physics Vol. 58 (1) IOP Publishing

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