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Asprusten, Martin, Worthington, Simon, Thompson, Richard C. (2014) Theory and simulation of ion Coulomb crystal formation in a Penning trap. Applied Physics B, 114 (1). 157-166 doi:10.1007/s00340-013-5708-7

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Reference TypeJournal (article/letter/editorial)
TitleTheory and simulation of ion Coulomb crystal formation in a Penning trap
JournalApplied Physics B
AuthorsAsprusten, MartinAuthor
Worthington, SimonAuthor
Thompson, Richard C.Author
Year2014 (January)Volume114
Issue1
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s00340-013-5708-7Search in ResearchGate
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Mindat Ref. ID9022833Long-form Identifiermindat:1:5:9022833:7
GUID0
Full ReferenceAsprusten, Martin, Worthington, Simon, Thompson, Richard C. (2014) Theory and simulation of ion Coulomb crystal formation in a Penning trap. Applied Physics B, 114 (1). 157-166 doi:10.1007/s00340-013-5708-7
Plain TextAsprusten, Martin, Worthington, Simon, Thompson, Richard C. (2014) Theory and simulation of ion Coulomb crystal formation in a Penning trap. Applied Physics B, 114 (1). 157-166 doi:10.1007/s00340-013-5708-7
In(2014, January) Applied Physics B Vol. 114 (1) Springer Science and Business Media LLC

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