Malyshevskii, V. S., Trukhov, D. A. (2010) Simulation of the passage of multiply charged ions through crystals. Russian Physics Journal, 53 (7). 738-742 doi:10.1007/s11182-010-9480-4
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Simulation of the passage of multiply charged ions through crystals | ||
Journal | Russian Physics Journal | ||
Authors | Malyshevskii, V. S. | Author | |
Trukhov, D. A. | Author | ||
Year | 2010 (December) | Volume | 53 |
Issue | 7 | ||
Publisher | Springer Science and Business Media LLC | ||
DOI | doi:10.1007/s11182-010-9480-4Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 9035392 | Long-form Identifier | mindat:1:5:9035392:5 |
GUID | 0 | ||
Full Reference | Malyshevskii, V. S., Trukhov, D. A. (2010) Simulation of the passage of multiply charged ions through crystals. Russian Physics Journal, 53 (7). 738-742 doi:10.1007/s11182-010-9480-4 | ||
Plain Text | Malyshevskii, V. S., Trukhov, D. A. (2010) Simulation of the passage of multiply charged ions through crystals. Russian Physics Journal, 53 (7). 738-742 doi:10.1007/s11182-010-9480-4 | ||
In | (2010, December) Russian Physics Journal Vol. 53 (7) Springer Science and Business Media LLC |
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