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Brudnyi, V. N., Verevkin, S. S., Kolin, N. G., Korulin, A. V. (2012) Electrical properties of electron-irradiated epitaxial n-GaN films. Russian Physics Journal, 55 (1). 53-57 doi:10.1007/s11182-012-9775-8

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Reference TypeJournal (article/letter/editorial)
TitleElectrical properties of electron-irradiated epitaxial n-GaN films
JournalRussian Physics Journal
AuthorsBrudnyi, V. N.Author
Verevkin, S. S.Author
Kolin, N. G.Author
Korulin, A. V.Author
Year2012 (June)Volume55
Issue1
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s11182-012-9775-8Search in ResearchGate
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Mindat Ref. ID9035653Long-form Identifiermindat:1:5:9035653:3
GUID0
Full ReferenceBrudnyi, V. N., Verevkin, S. S., Kolin, N. G., Korulin, A. V. (2012) Electrical properties of electron-irradiated epitaxial n-GaN films. Russian Physics Journal, 55 (1). 53-57 doi:10.1007/s11182-012-9775-8
Plain TextBrudnyi, V. N., Verevkin, S. S., Kolin, N. G., Korulin, A. V. (2012) Electrical properties of electron-irradiated epitaxial n-GaN films. Russian Physics Journal, 55 (1). 53-57 doi:10.1007/s11182-012-9775-8
In(2012, June) Russian Physics Journal Vol. 55 (1) Springer Science and Business Media LLC

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Brudnyi, V. N., Grinyaev, S. N., Kolin, N. G. (2006) The charge neutrality level in w-AlxGa1−x N solid solutions. Russian Physics Journal, 49 (8). 874-877 doi:10.1007/s11182-006-0189-3
Brudnyi, V. N., Grinyaev, S. N., Kolin, N. G. (2007) Correlation between energy positions of deep intrinsic point-defect levels and a limiting fermi level in irradiated III–V semiconductors. Russian Physics Journal, 50 (5). 429-434 doi:10.1007/s11182-007-0062-z
Brudnyi, V. N., Kosobutsky, A. V., Kolin, N. G. (2008) The charge neutrality level and the fermi level pinning in A3N (BN, AlN, GaN, InN) nitrides. Russian Physics Journal, 51 (12). 1270-1278 doi:10.1007/s11182-009-9176-9
Lee, In-Hwan, Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Kolin, N. G., Boiko, V. M., Korulin, A. V., Pearton, S. J. (2011) Carrier Removal Rates and Deep Traps in Neutron Irradiated n-GaN Films. Journal of the Electrochemical Society, 158. doi:10.1149/1.3607986
Afonin, A. G., Brudnyi, V. N., Brudnyi, P. A., Velikovskii, L. E. (2020) Features of Radiation Changes in Electrical Properties of InAlN/GaN Hemts. Russian Physics Journal, 62 (9). 1656-1662 doi:10.1007/s11182-020-01888-w
Brudnyi, V. N., Kolin, N. G., Potapov, A. I. (1992) Electrophysical properties and annealing of defects in nuclear transmutation-doped GaAs irradiated by H+ ions. Russian Physics Journal, 35 (10). 943-946 doi:10.1007/bf00559890
Brudnyi, V. N., Charchenko, V. A., Kolin, N. G., Novikov, V. A., Pogrebnyak, A. D., Ruzimov, Sh. M. (1986) Electrical Properties and Positron Annihilation in Neutron-Irradiated n-InP. physica status solidi (a), 93 (1). 195-200 doi:10.1002/pssa.2210930124
Brudnyi, V. N., Vedernikova, T. V. (2007) Electro-physical properties of cadmium-silicon diarsenide irradiated by H+ ions. Russian Physics Journal, 50 (8). 756-759 doi:10.1007/s11182-007-0114-4
Brudnyi, V. N., Kosobutsky, A. V., Kolin, N. G. (2011) Effect of pressure and mechanical stress on the electronic properties of AlN and GaN. Physics of the Solid State, 53. 679-688 doi:10.1134/s1063783411040093
Brudnyi, V. N. (2014) Growth Defects in Light Emitting InGaN/GaN Structures. Russian Physics Journal, 57 (3). 341-344 doi:10.1007/s11182-014-0245-3
Titov, K. S., Brudnyi, V. N. (2014) Structure Defects in a Triple Semiconducting Compound ZnGeP2. Russian Physics Journal, 57 (1). 50-54 doi:10.1007/s11182-014-0206-x
 
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