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Filippov, V. V., Vlasov, А. N., Bormontov, Е. N. (2014) Modeling of Electronic Properties of Strained Silicon on a Germanium Substrate. Russian Physics Journal, 57 (1). 55-62 doi:10.1007/s11182-014-0207-9

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Reference TypeJournal (article/letter/editorial)
TitleModeling of Electronic Properties of Strained Silicon on a Germanium Substrate
JournalRussian Physics Journal
AuthorsFilippov, V. V.Author
Vlasov, А. N.Author
Bormontov, Е. N.Author
Year2014 (May)Volume57
Issue1
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s11182-014-0207-9Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9036110Long-form Identifiermindat:1:5:9036110:0
GUID0
Full ReferenceFilippov, V. V., Vlasov, А. N., Bormontov, Е. N. (2014) Modeling of Electronic Properties of Strained Silicon on a Germanium Substrate. Russian Physics Journal, 57 (1). 55-62 doi:10.1007/s11182-014-0207-9
Plain TextFilippov, V. V., Vlasov, А. N., Bormontov, Е. N. (2014) Modeling of Electronic Properties of Strained Silicon on a Germanium Substrate. Russian Physics Journal, 57 (1). 55-62 doi:10.1007/s11182-014-0207-9
In(2014, May) Russian Physics Journal Vol. 57 (1) Springer Science and Business Media LLC

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