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Sengupta, Amretashis, Shah, Pashupati, Sarkar, Chandan Kumar, Requejo, Felix G. (2012) Computational Study on Semiconducting and Metallic Nanocrystal Embedded Gate Oxide MOS Non Volatile Memory Devices. Advanced Science Letters, 10 (1). 47-54 doi:10.1166/asl.2012.2157

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Reference TypeJournal (article/letter/editorial)
TitleComputational Study on Semiconducting and Metallic Nanocrystal Embedded Gate Oxide MOS Non Volatile Memory Devices
JournalAdvanced Science Letters
AuthorsSengupta, AmretashisAuthor
Shah, PashupatiAuthor
Sarkar, Chandan KumarAuthor
Requejo, Felix G.Author
Year2012 (May 15)Volume10
Issue1
PublisherAmerican Scientific Publishers
DOIdoi:10.1166/asl.2012.2157Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9202595Long-form Identifiermindat:1:5:9202595:6
GUID0
Full ReferenceSengupta, Amretashis, Shah, Pashupati, Sarkar, Chandan Kumar, Requejo, Felix G. (2012) Computational Study on Semiconducting and Metallic Nanocrystal Embedded Gate Oxide MOS Non Volatile Memory Devices. Advanced Science Letters, 10 (1). 47-54 doi:10.1166/asl.2012.2157
Plain TextSengupta, Amretashis, Shah, Pashupati, Sarkar, Chandan Kumar, Requejo, Felix G. (2012) Computational Study on Semiconducting and Metallic Nanocrystal Embedded Gate Oxide MOS Non Volatile Memory Devices. Advanced Science Letters, 10 (1). 47-54 doi:10.1166/asl.2012.2157
In(2012, May) Advanced Science Letters Vol. 10 (1) American Scientific Publishers

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Sengupta, Amretashis, Sarkar, Chandan Kumar, Requejo, Felix G (2011) Comparative study of CNT, silicon nanowire and fullerene embedded multilayer high-kgate dielectric MOS memory devices. Journal of Physics D: Applied Physics, 44. 405101pp. doi:10.1088/0022-3727/44/40/405101
Sengupta, Amretashis, Sarkar, Chandan Kumar (2013) Surface Potential Based Analytical Modeling of Double Gate MOSFET with Si and Au Nano-Dots Embedded Gate Dielectric for Non-Volatile Memory Applications. Journal of Computational and Theoretical Nanoscience, 10 (4). 906-913 doi:10.1166/jctn.2013.2788
Dash, Satyabhama, Chakraborty, Gargi, Sengupta, Amretashis, Sarkar, Chandan Kumar (2012) Optimization of Tunneling Currents Through CNT and Si Nanocrystals Embedded Gate Oxide Metal-Oxide-Semiconductor Structure Using Genetic Algorithm Approach for Memory Device Application. Journal of Computational and Theoretical Nanoscience, 9 (3). 434-440 doi:10.1166/jctn.2012.2043
Chakraborty, G., Sengupta, A., Requejo, F. G., Sarkar, C. K. (2011) Study of the relative performance of silicon and germanium nanoparticles embedded gate oxide in metal–oxide–semiconductor memory devices. Journal of Applied Physics, 109 (6). 64504pp. doi:10.1063/1.3555087
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Sharma, Bikash, Sengupta, Amretashis, Sarkar, C.K. (2018) Computational study of CNT based nanoscale reversible mass transport archival memory with Fe, Co and Ni nano-shuttles. Computational Materials Science, 146. 112-118 doi:10.1016/j.commatsci.2018.01.017
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Kim, JooHyung, Yang, JungYup, Lee, JunSeok, Hong, JinPyo (2008) Memory characteristics of cobalt-silicide nanocrystals embedded in HfO2 gate oxide for nonvolatile nanocrystal flash devices. Applied Physics Letters, 92 (1). 13512pp. doi:10.1063/1.2831667
Horváth, Zs.J., Basa, P. (2009) Nanocrystal Non-Volatile Memory Devices. Materials Science Forum, 609. 1-9 doi:10.4028/www.scientific.net/msf.609.1
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