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Avrov, D.D., Dorozhkin, Sergey I., Lebedev, Andrew O., Rastegaev, V.P., Tairov, Yuri M. (2000) Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process. Materials Science Forum, 338. 1515-1518 doi:10.4028/www.scientific.net/msf.338-342.1515

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Reference TypeJournal (article/letter/editorial)
TitleSilicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process
JournalMaterials Science Forum
AuthorsAvrov, D.D.Author
Dorozhkin, Sergey I.Author
Lebedev, Andrew O.Author
Rastegaev, V.P.Author
Tairov, Yuri M.Author
Year2000 (May)Volume338
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.338-342.1515Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9849706Long-form Identifiermindat:1:5:9849706:7
GUID0
Full ReferenceAvrov, D.D., Dorozhkin, Sergey I., Lebedev, Andrew O., Rastegaev, V.P., Tairov, Yuri M. (2000) Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process. Materials Science Forum, 338. 1515-1518 doi:10.4028/www.scientific.net/msf.338-342.1515
Plain TextAvrov, D.D., Dorozhkin, Sergey I., Lebedev, Andrew O., Rastegaev, V.P., Tairov, Yuri M. (2000) Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process. Materials Science Forum, 338. 1515-1518 doi:10.4028/www.scientific.net/msf.338-342.1515
In(2000) Materials Science Forum Vol. 338. Trans Tech Publications, Ltd.

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Dorozhkin, Sergey I., Lebedev, Andrew O., Maximov, Andrew Yu., Tairov, Yuri M. (2002) Aluminium Nitride Bulk Crystals by Sublimation Method: Growth and X-Ray Characterization. Materials Science Forum, 389. 1453-1456 doi:10.4028/www.scientific.net/msf.389-393.1453
Reshanov, Sergey A., Rastegaev, V.P., Tairov, Yuri M. (2001) Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport. Materials Science Forum, 353. 53-56 doi:10.4028/www.scientific.net/msf.353-356.53
Bakin, Andrey, Dorozhkin, Sergey I., Zubrilov, A.S., Kuznetsov, N.I., Tairov, Yuri M. (1998) Optically Transparent 6H-Silicon Carbide. Materials Science Forum, 264. 53-56 doi:10.4028/www.scientific.net/msf.264-268.53
Avrov, D.D, Bakin, A.S, Dorozhkin, S.I, Rastegaev, V.P, Tairov, Yu.M (1999) The analysis of mass transfer in system β-SiC–α-SiC under silicon carbide sublimation growth. Journal of Crystal Growth, 198. 1011-1014 doi:10.1016/s0022-0248(98)01215-9
Jacob, Chacko, Hong, Moon Hi, Chung, Juyong, Pirouz, P., Nishino, Shigehiro (2000) Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane. Materials Science Forum, 338. 249-252 doi:10.4028/www.scientific.net/msf.338-342.249
Avrov, D.D., Bulatov, A.V., Dorozhkin, S.I., Lebedev, A.O., Tairov, Yu.M. (2005) Defect formation in silicon carbide large-scale ingots grown by sublimation technique. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.112
Lebedev, A.O., Avrov, D.D., Bulatov, A.V., Dorozhkin, S.I., Tairov, Yu.M., Fadeev, A.Yu. (2011) Defect structure of 4H silicon carbide ingots. Journal of Crystal Growth, 318 (1). 394-396 doi:10.1016/j.jcrysgro.2010.10.166
Khlebnikov, I.I., Cherednichenko, Dimitri I., Khlebnikov, Yuri I., Sudarshan, Tangali S. (2000) Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes. Materials Science Forum, 338. 59-62 doi:10.4028/www.scientific.net/msf.338-342.59
Burton, J.C., Long, F.H., Khlebnikov, Yuri I., Khlebnikov, I.I., Parker, Mathew, Sudarshan, Tangali S. (2000) Characterization of Silicon Carbide using Raman Spectroscopy. Materials Science Forum, 338. 615-618 doi:10.4028/www.scientific.net/msf.338-342.615
Gehrke, Thomas, Linthicum, Kevin J., Rajagopal, Pradeep, Preble, Edward A., Carlson, E.P., Robin, Brian M., Davis, Robert F. (2000) Pendeo-EpitaxyTM Process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition. Materials Science Forum, 338. 1491-1494 doi:10.4028/www.scientific.net/msf.338-342.1491
Sanchez, Edward M., Heydemann, V.D., Snyder, David, Rohrer, Gregory S., Skowronski, Marek (2000) Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide. Materials Science Forum, 338. 63-66 doi:10.4028/www.scientific.net/msf.338-342.63
 
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