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Yamashita, Tamotsu, Matsuhata, Hirofumi, Sekiguchi, Takashi, Momose, Kenji, Osawa, Hiroshi, Kitabatake, Makoto (2015) Characterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial Wafers. Materials Science Forum, 821. 173-176 doi:10.4028/www.scientific.net/msf.821-823.173

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial Wafers
JournalMaterials Science Forum
AuthorsYamashita, TamotsuAuthor
Matsuhata, HirofumiAuthor
Sekiguchi, TakashiAuthor
Momose, KenjiAuthor
Osawa, HiroshiAuthor
Kitabatake, MakotoAuthor
Year2015 (June)Volume821
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.821-823.173Search in ResearchGate
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Mindat Ref. ID9883485Long-form Identifiermindat:1:5:9883485:1
GUID0
Full ReferenceYamashita, Tamotsu, Matsuhata, Hirofumi, Sekiguchi, Takashi, Momose, Kenji, Osawa, Hiroshi, Kitabatake, Makoto (2015) Characterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial Wafers. Materials Science Forum, 821. 173-176 doi:10.4028/www.scientific.net/msf.821-823.173
Plain TextYamashita, Tamotsu, Matsuhata, Hirofumi, Sekiguchi, Takashi, Momose, Kenji, Osawa, Hiroshi, Kitabatake, Makoto (2015) Characterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial Wafers. Materials Science Forum, 821. 173-176 doi:10.4028/www.scientific.net/msf.821-823.173
In(2015) Materials Science Forum Vol. 821. Trans Tech Publications, Ltd.

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Yamashita, T., Matsuhata, H., Sekiguchi, T., Momose, K., Osawa, H., Kitabatake, M. (2015) Characterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopy. Journal of Crystal Growth, 416. 142-147 doi:10.1016/j.jcrysgro.2015.01.034
Yamashita, Tamotsu, Matsuhata, Hirofumi, Miyasaka, Yoshihiko, Momose, Kenji, Sato, Takayuki, Kitabatake, Makoto (2014) Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography. Materials Science Forum, 778. 374-377 doi:10.4028/www.scientific.net/msf.778-780.374
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Yamada, Keiichi, Ishiyama, Osamu, Tamura, Kentaro, Yamashita, Tamotsu, Shimozato, Atsushi, Kato, Tomohisa, Senzaki, Junji, Matsuhata, Hirohumi, Kitabatake, Makoto (2014) Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment. Materials Science Forum, 778. 545-548 doi:10.4028/www.scientific.net/msf.778-780.545
 
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