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Nakanishi, S., Tokutaka, H., Nishimori, K., Kishida, S., Ishihara, N. (1990) The difference between 6H-SiC (0001) and (0001) faces observed by AES, LEED and ESCA. Applied Surface Science, 41. 44-48 doi:10.1016/0169-4332(89)90030-5

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Reference TypeJournal (article/letter/editorial)
TitleThe difference between 6H-SiC (0001) and (0001) faces observed by AES, LEED and ESCA
JournalApplied Surface Science
AuthorsNakanishi, S.Author
Tokutaka, H.Author
Nishimori, K.Author
Kishida, S.Author
Ishihara, N.Author
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90030-5Search in ResearchGate
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Mindat Ref. ID9894900Long-form Identifiermindat:1:5:9894900:1
GUID0
Full ReferenceNakanishi, S., Tokutaka, H., Nishimori, K., Kishida, S., Ishihara, N. (1990) The difference between 6H-SiC (0001) and (0001) faces observed by AES, LEED and ESCA. Applied Surface Science, 41. 44-48 doi:10.1016/0169-4332(89)90030-5
Plain TextNakanishi, S., Tokutaka, H., Nishimori, K., Kishida, S., Ishihara, N. (1990) The difference between 6H-SiC (0001) and (0001) faces observed by AES, LEED and ESCA. Applied Surface Science, 41. 44-48 doi:10.1016/0169-4332(89)90030-5
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

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Nishimori, K., Tokutaka, H., Okinaga, Z., Kishida, S., Ishihara, N. (1990) Observation of Si and SiC surface structures using the magnetic LEED method. Applied Surface Science, 41. 49-52 doi:10.1016/0169-4332(89)90031-7
Kishida, S., Tokutaka, H., Higashi, H., Nishimori, K., Ishihara, N. (1991) Preparation conditions of flat 80 K phase BiSrCaCuO thin films by RF magnetron sputtering. Applied Surface Science, 48. 446-449 doi:10.1016/0169-4332(91)90372-q
Tokutaka, H., Kishida, S., Fujimoto, H., Nishimori, K., Ishihara, N. (1991) LEED-AES observations of the vacuum-cleaved BiSrCa44 single crystals. Surface Science Letters, 242 (1). doi:10.1016/0167-2584(91)90421-m
Nishimori, Katsumi, Tokutaka, Heizo, Nakanishi, Shuuichi, Kishida, Satoru, Ishihara, Naganori (1989) Off-Angle SiC(0001) Surface and Cu/SiC Interface Reaction. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1345
Tokutaka, H., Kishida, S., Fujimoto, H., Nishimori, K., Ishihara, N. (1991) LEED-AES observations of the vacuum-cleaved Biî—¸Srî—¸Caî—¸Cuî—¸O single crystals. Surface Science, 242 (1). 50-53 doi:10.1016/0039-6028(91)90240-s
Nishimori, K., Tokytaka, H., Tamon, T., Kishida, S., Ishihara, N. (1991) Surface study of single-crystal 80 K BiSrCaCuO superconductor with Si and Nb by RHEED and XPS depth profile. Applied Surface Science, 48. 450-453 doi:10.1016/0169-4332(91)90373-r
Yamano, K., Nishimori, K., Tokutaka, H., Kishida, S., Ishihara, N. (1992) Observation of the initial growth of semiconductor films on the Bi-based superconducting single crystal by RHEED method low temperature reaction of Ge with BSCCO single crystal. Applied Surface Science, 60. 754-759 doi:10.1016/0169-4332(92)90508-u
Nishimori, K., Tokutaka, H., Sumi, H., Ishihara, N. (1991) Interface reaction of Si thin film on Au substrate. Applied Surface Science, 47. 365-369 doi:10.1016/0169-4332(91)90089-3
Kishida, Satoru, Tokutaka, Heizo, Nakanishi, Syuuichi, Nishimori, Katsumi, Ishihara, Naganori, Fijimoto, Hiroshi (1989) LEED-AES and XPS Studies of Bi-Sr-Ca-Cu-O Single Crystal Surfaces. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l406
Asahara, Y., Tokutaka, H., Nishimori, K., Ishihara, N., Makino, N., Héricy, J.Le, Langeron, J.P. (1988) Surface composition analysis of Au-Cu alloy by micro-auger electron spectroscopy. Applied Surface Science, 33. 107-111 doi:10.1016/0169-4332(88)90294-2
Kishida, S., Tokutaka, H., Nakanishi, S., Fujimoto, H., Nishimori, K., Ishihara, N., Watanabe, Y., Futo, W. (1990) The preparation conditions and characteristics of the Bi-Sr-Ca-Cu-O single crystals. Journal of Crystal Growth, 99 (1). 937-941 doi:10.1016/s0022-0248(08)80057-7
 
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