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Sébenne, C.A., Lacharme, J.P., Andriamanantenasoa, I., Khial, M. (1990) Local roughness and surface states on Si(001): Analysis of vacuum annealings and oxygen adsorption-desorption processes. Applied Surface Science, 41. 352-356 doi:10.1016/0169-4332(89)90084-6

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Reference TypeJournal (article/letter/editorial)
TitleLocal roughness and surface states on Si(001): Analysis of vacuum annealings and oxygen adsorption-desorption processes
JournalApplied Surface Science
AuthorsSébenne, C.A.Author
Lacharme, J.P.Author
Andriamanantenasoa, I.Author
Khial, M.Author
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90084-6Search in ResearchGate
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Mindat Ref. ID9894954Long-form Identifiermindat:1:5:9894954:2
GUID0
Full ReferenceSébenne, C.A., Lacharme, J.P., Andriamanantenasoa, I., Khial, M. (1990) Local roughness and surface states on Si(001): Analysis of vacuum annealings and oxygen adsorption-desorption processes. Applied Surface Science, 41. 352-356 doi:10.1016/0169-4332(89)90084-6
Plain TextSébenne, C.A., Lacharme, J.P., Andriamanantenasoa, I., Khial, M. (1990) Local roughness and surface states on Si(001): Analysis of vacuum annealings and oxygen adsorption-desorption processes. Applied Surface Science, 41. 352-356 doi:10.1016/0169-4332(89)90084-6
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

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Andriamanantenasoa, I., Lacharme, J.P., Sébenne, C.A. (1987) Effect of room-temperature adsorption of Sn on Si(100) surface properties. Surface Science Letters, 189. doi:10.1016/0167-2584(87)90493-2
Orlowski, B.A., Lacharme, J.P., Sébenne, C.A., Bensalah, S. (1990) Interface formation on n- and p-CdTe(110) surfaces with Cu and Au. Applied Surface Science, 41. 491-496 doi:10.1016/0169-4332(89)90108-6
Andriamanantenasoa, I., Lacharme, J.P., Sébenne, C.A. (1987) Effect of room-temperature adsorption of Sn on Si(100) surface properties. Surface Science, 189. 563-569 doi:10.1016/s0039-6028(87)80482-x
Chérif, S.M., Lacharme, J.-P., Sébenne, C.A. (1992) Morphological effect of a clean Si surface on NH3 dissociative adsorption. Applied Surface Science, 56. 777-781 doi:10.1016/0169-4332(92)90337-w
Orlowski, B.A., Lacharme, J.P., Sébenne, C.A. (1992) Electronic properties of clean CdSe surfaces upon Fe adsorption. Applied Surface Science, 56. 224-227 doi:10.1016/0169-4332(92)90238-s
Lacharme, J.P., Sébenne, C., Chérif, S.M., Chikhi, M., Safta, N., Zaïbi, M.A. (1993) Early stages of H2O adsorption on clean Si(100). Applied Surface Science, 65. 598-602 doi:10.1016/0169-4332(93)90725-q
Reqqass, H., Lacharme, J.-P., Sébenne, C.A., Eddrief, M., Le Thanh, V. (1996) Surface electronic properties of GaSe-covered Si(111) upon UHV thermal desorption of the GaSe epitaxial layer. Applied Surface Science, 92. 357-361 doi:10.1016/0169-4332(95)00255-3
Bensalah, S., Lacharme, J.P., Sébenne, C.A. (1989) √3×√3 reconstruction along the (111) face of highly Boron-doped Si upon vacuum annealing. Surface Science Letters, 211. doi:10.1016/0167-2584(89)90366-6
Chérif, S.M., Lacharme, J.-P., Sébenne, C.A. (1992) Surface properties of Si(100)2 × 1 upon NH3 adsorption and vacuum annealing. Surface Science, 262 (1). 33-41 doi:10.1016/0039-6028(92)90457-h
Zaïbi, M.A., Lacharme, J.P., Sébenne, C.A. (1997) Water vapour adsorption on the Si(111)-(7 × 7) surface. Surface Science, 377. 639-643 doi:10.1016/s0039-6028(96)01481-1
Bensalah, S., Lacharme, J.P., Sébenne, C.A. (1989) reconstruction along the (111) face of highly boron-doped Si upon vacuum annealing. Surface Science, 211. 586-592 doi:10.1016/0039-6028(89)90818-2
 
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