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Yasuda, Y., Zaima, S., Kaida, T., Koide, Y. (1990) Formation of Si-SiO2 interfaces at low temperatures using microwave-excited plasma. Applied Surface Science, 41. 429-432 doi:10.1016/0169-4332(89)90097-4

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Reference TypeJournal (article/letter/editorial)
TitleFormation of Si-SiO2 interfaces at low temperatures using microwave-excited plasma
JournalApplied Surface Science
AuthorsYasuda, Y.Author
Zaima, S.Author
Kaida, T.Author
Koide, Y.Author
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90097-4Search in ResearchGate
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Mindat Ref. ID9894967Long-form Identifiermindat:1:5:9894967:6
GUID0
Full ReferenceYasuda, Y., Zaima, S., Kaida, T., Koide, Y. (1990) Formation of Si-SiO2 interfaces at low temperatures using microwave-excited plasma. Applied Surface Science, 41. 429-432 doi:10.1016/0169-4332(89)90097-4
Plain TextYasuda, Y., Zaima, S., Kaida, T., Koide, Y. (1990) Formation of Si-SiO2 interfaces at low temperatures using microwave-excited plasma. Applied Surface Science, 41. 429-432 doi:10.1016/0169-4332(89)90097-4
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

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Yasuda, Y., Zaima, S., Kaida, T., Koide, Y. (1990) Mechanisms of silicon oxidation at low temperatures by microwave‐excited O2gas and O2‐N2mixed gas. Journal of Applied Physics, 67 (5). 2603-2607 doi:10.1063/1.345465
Yasuda, Y., Zaima, S., Sakashita, M. (1990) Studies on charge trapping and interface state generation in MOS capacitors at low temperatures. Applied Surface Science, 41. 420-424 doi:10.1016/0169-4332(89)90095-0
Zaima, S., Maruyama, T., Yasuda, Y. (1990) Piezoresistance in n-channel inversion layers of Si MOSFET's. Applied Surface Science, 41. 433-438 doi:10.1016/0169-4332(89)90098-6
Yamauchi, T., Kataoka, M., Zaima, S., Koide, Y., Yasuda, Y. (1992) Formation of interfacial layers and electrical conduction mechanisms dominating the contact resistivity in refractory metal-Si contacts. Applied Surface Science, 56. 545-550 doi:10.1016/0169-4332(92)90286-7
Zaima, S., Yamauchi, T., Koide, Y., Yasuda, Y. (1993) Study on determining factors of low contact resistivity in transition metal-silicon systems. Applied Surface Science, 70. 624-628 doi:10.1016/0169-4332(93)90591-x
Ohshima, N., Koide, Y., Zaima, S., Yasuda, Y. (1991) Formation of a superstructure in the initial stage of Ge epitaxial growth on Si(100) substrates. Applied Surface Science, 48. 69-75 doi:10.1016/0169-4332(91)90309-8
Koide, Y., Zaima, S., Okada, M., Yasuda, Y. (1994) Photo-irradiation effects on surface reactions in Si monolayer overgrowth by Si2H6 source MBE. Applied Surface Science, 79. 304-309 doi:10.1016/0169-4332(94)90427-8
Ohshima, N., Zaima, S., Koide, Y., 'Tomioka, S., Yasuda, Y. (1992) Initial growth of Ge films on Si(111)7 × 7 surfaces by gas source molecular beam epitaxy. Applied Surface Science, 60. 120-125 doi:10.1016/0169-4332(92)90404-l
Kamiura, Y., Hashimoto, F., Iwami, M. (1990) Iron accumulation at the Si-SiO2 interface and possible reduction of SiO2. Applied Surface Science, 41. 447-450 doi:10.1016/0169-4332(89)90101-3
Sakashita, M., Zaima, S., Koide, Y., Yasuda, Y. (1992) Observation of SiSiO2 interface states within the conduction band by tunneling current spectroscopy. Applied Surface Science, 56. 841-845 doi:10.1016/0169-4332(92)90348-2
Yasuda, Y., Zaima, S., Matsumoto, M., Pak, K., Yonezu, H. (1988) Tunneling injection damage in Si-SiO2 structures and its correlation with oxidation conditions. Applied Surface Science, 33. 1066-1072 doi:10.1016/0169-4332(88)90417-5
 
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