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Takeuchi, Takayuki, Maezawa, Chikako, Nomura, Takashi, Ishikawa, Kenji, Miyao, Masahiro, Hagino, Minoru (1990) Raman study of strain distribution in interface region of GaAs/GaP heteroepitaxial layers grown by MBE. Applied Surface Science, 41. 530-533 doi:10.1016/0169-4332(89)90116-5

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Reference TypeJournal (article/letter/editorial)
TitleRaman study of strain distribution in interface region of GaAs/GaP heteroepitaxial layers grown by MBE
JournalApplied Surface Science
AuthorsTakeuchi, TakayukiAuthor
Maezawa, ChikakoAuthor
Nomura, TakashiAuthor
Ishikawa, KenjiAuthor
Miyao, MasahiroAuthor
Hagino, MinoruAuthor
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90116-5Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9894986Long-form Identifiermindat:1:5:9894986:1
GUID0
Full ReferenceTakeuchi, Takayuki, Maezawa, Chikako, Nomura, Takashi, Ishikawa, Kenji, Miyao, Masahiro, Hagino, Minoru (1990) Raman study of strain distribution in interface region of GaAs/GaP heteroepitaxial layers grown by MBE. Applied Surface Science, 41. 530-533 doi:10.1016/0169-4332(89)90116-5
Plain TextTakeuchi, Takayuki, Maezawa, Chikako, Nomura, Takashi, Ishikawa, Kenji, Miyao, Masahiro, Hagino, Minoru (1990) Raman study of strain distribution in interface region of GaAs/GaP heteroepitaxial layers grown by MBE. Applied Surface Science, 41. 530-533 doi:10.1016/0169-4332(89)90116-5
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

See Also

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Nomura, Takashi, Miyao, Masahiro, Ishikawa, Kenji, Suzuki, Yoshiko, Hagino, Minoru (1988) Accommodations and initial growth stages of GaAs/GaP and GaP/GaAs by MBE. Applied Surface Science, 33. 1176-1182 doi:10.1016/0169-4332(88)90432-1
Nomura, Takashi, Wakatuki, Kazuhito, Miyao, Masahiro, Hagino, Minoru (1990) Characterization of the GaAs buffer layer grown on GaP by MBE for the two-step growth method. Applied Surface Science, 41. 512-515 doi:10.1016/0169-4332(89)90112-8
Nomura, Takashi, Maeda, Yuuji, Miyao, Masahiro, Hagino, Minoru, Ishikawa, Kenji (1987) Accommodation of Large Lattice Mismatch of GaP on GaAs(100) and GaAs on GaP(100) Layers Grown by MBE. Japanese Journal of Applied Physics, 26. 908-911 doi:10.1143/jjap.26.908
Nomura, Takashi, Murakami, Kenji, Ishikawa, Kenji, Miyao, Masahiro, Yamaguchi, Tsuyoshi, Sasaki, Akira, Hagino, Minoru (1991) Structure of GaAs heteroepitaxial layer grown on GaP(001) by molecular beam epitaxy. Surface Science Letters, 242 (1). doi:10.1016/0167-2584(91)90442-t
Takashi Nomura, , Kenji Murakami, , Kenji Ishikawa, , Masahiro Miyao, , Tsuyoshi Yamaguchi, , Akira Sasaki, , Minoru Hagino, (1991) Structure of GaAs heteroepitaxial layer grown on GaP(001) by molecular beam epitaxy. Surface Science, 242 (1). 166-170 doi:10.1016/0039-6028(91)90261-p
Nomura, Takashi, Yamagata, Taku, Warashina, Hidenaga, Ishikawa, Kenji, Hagino, Minoru (1993) Temperature programmed desorption study of (NH4)2Sx treated GaAs surfaces. Applied Surface Science, 65. 638-642 doi:10.1016/0169-4332(93)90732-q
Yago, Haruo, Nomura, Takashi, Ishikawa, Kenji (1995) Strain relaxation in GaAs islands on GaP(001). Applied Surface Science, 84. 119-124 doi:10.1016/0169-4332(94)00541-9
Nomura, Takashi, Ishikawa, Kenji, Murakami, Kenji, Hagino, Minoru (1993) Anisotropic relaxation of misfit strain in GaAs films grown on GAP (001). Journal of Crystal Growth, 127 (1). 584-588 doi:10.1016/0022-0248(93)90688-s
Yoshikawa, Masahiro, Nomura, Takashi, Ishikawa, Kenji, Hagino, Minoru (1995) Growth Process in Initial Stage of GaAs/GaP(001) by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 34. 1094-1097 doi:10.1143/jjap.34.1094
Chinen, Kouyū, Niigaki, Minoru, Miyao, Masahiro, Hagino, Minoru (1980) GaAs Transmission Photocathode Grown by MBE. Japanese Journal of Applied Physics, 19 (11) doi:10.1143/jjap.19.l703
Iizuka, Kanji, Yoshida, Takashi, Hasobe, Makoto, Matsuda, Ikuo, Suzuki, Toshimasa (1990) Raman study of the stress in MBE-grown AlxGa1-xAs on Si. Applied Surface Science, 41. 587-590 doi:10.1016/0169-4332(89)90127-x
 
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