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Hayashi, Shigeo, Sakamoto, Takao, Fujita, Shizuo, Fujita, Shigeo (1990) Strained-layer superlattice buffers for high-quality heteroepilayers of ZnSe on GaAs. Applied Surface Science, 41. 534-538 doi:10.1016/0169-4332(89)90117-7

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Reference TypeJournal (article/letter/editorial)
TitleStrained-layer superlattice buffers for high-quality heteroepilayers of ZnSe on GaAs
JournalApplied Surface Science
AuthorsHayashi, ShigeoAuthor
Sakamoto, TakaoAuthor
Fujita, ShizuoAuthor
Fujita, ShigeoAuthor
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90117-7Search in ResearchGate
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Mindat Ref. ID9894987Long-form Identifiermindat:1:5:9894987:0
GUID0
Full ReferenceHayashi, Shigeo, Sakamoto, Takao, Fujita, Shizuo, Fujita, Shigeo (1990) Strained-layer superlattice buffers for high-quality heteroepilayers of ZnSe on GaAs. Applied Surface Science, 41. 534-538 doi:10.1016/0169-4332(89)90117-7
Plain TextHayashi, Shigeo, Sakamoto, Takao, Fujita, Shizuo, Fujita, Shigeo (1990) Strained-layer superlattice buffers for high-quality heteroepilayers of ZnSe on GaAs. Applied Surface Science, 41. 534-538 doi:10.1016/0169-4332(89)90117-7
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

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Fujita, Shizuo, Fujita, Shigeo (1994) Photocatalytic surface reactions in metalorganic vapor-phase epitaxy. Applied Surface Science, 79. 41-46 doi:10.1016/0169-4332(94)90385-9
Fujita, Shizuo, Fujita, Shigeo (1995) Photoassisted growth of II–VI semiconductor films. Applied Surface Science, 86. 431-436 doi:10.1016/0169-4332(94)00454-4
Dumont, HervĂ©, Fujita, Shizuo, Fujita, Shigeo (1995) Photo-assisted growth and characterization of ZnxCd1−xS by MOVPE. Applied Surface Science, 86. 442-446 doi:10.1016/0169-4332(94)00430-7
Fujita, Shizuo, Wu, Yi‐hong, Kawakami, Yoichi, Fujita, Shigeo (1992) Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained‐layer single quantum wells and superlattices on GaAs substrates. Journal of Applied Physics, 72 (11). 5233-5239 doi:10.1063/1.352005
Fujita, Shizuo, Asano, Takeharu, Maehara, Kensaku, Fujita, Shigeo (1994) Photo-assisted metalorganic vapor-phase epitaxy of blue/blue-green light emitting diode structures with ZnSe-based wide-gap semiconductors. Applied Surface Science, 79. 270-274 doi:10.1016/0169-4332(94)90421-9
Fujita, Shizuo, Sakamoto, Takao, Isemura, Masashi, Fujita, Shigeo (1988) Use of methylselenol for organometallic vapor-phase epitaxy of ZnSe. Journal of Crystal Growth, 87 (4). 581-584 doi:10.1016/0022-0248(88)90110-8
Fujita, Shigeo, Tanabe, Akira, Sakamoto, Takao, Isemura, Masashi, Fujita, Shizuo (1987) Growth Rate Enhancement by Xenon Lamp Irradiation in Organometallic Vapor-Phase Epitaxy of ZnSe. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l2000
Fujita, Shizuo, Terada, Kosuke, Sakamoto, Takao, Fujita, Shigeo (1989) Effects of lattice-matching on doping characteristics of ZnSxSe1−x epitaxial layers on GaAs substrates grown by OMVPE. Journal of Crystal Growth, 94 (1). 102-108 doi:10.1016/0022-0248(89)90608-8
Fujita, Shizuo, Funato, Mitsuru, Hayashi, Shigeo, Fujita, Shigeo (1989) Cubic ZnCdS Lattice-Matched to GaAs: A Novel Material for Short-Wavelength Optoelectronic Applications. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l898
Ko, Hyun-Chul, Yamaguchi, Shigeo, Kurusu, Hitoshi, Kawakami, Yoichi, Fujita, Shizuo, Fujita, Shigeo (1996) Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 35. doi:10.1143/jjap.35.l366
Funato, Mitsuru, Fujita, Shizuo, Fujita, Shigeo (1993) Structural Analysis of ZnSe-GaAs Quantum Wells. Japanese Journal of Applied Physics, 32. 3396-3402 doi:10.1143/jjap.32.3396
 
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