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Eriksson, Th., Wang, J.-T., Carlsson, J.-O., Keinonen, J., Östling, M., Petersson, C.S. (1991) Influence of standard processing on area-selective chemical vapour deposition of tungsten on tantalum disilicide. Applied Surface Science, 53. 35-40 doi:10.1016/0169-4332(91)90239-g

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of standard processing on area-selective chemical vapour deposition of tungsten on tantalum disilicide
JournalApplied Surface Science
AuthorsEriksson, Th.Author
Wang, J.-T.Author
Carlsson, J.-O.Author
Keinonen, J.Author
Östling, M.Author
Petersson, C.S.Author
Year1991 (November)Volume53
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(91)90239-gSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID9895596Long-form Identifiermindat:1:5:9895596:9
GUID0
Full ReferenceEriksson, Th., Wang, J.-T., Carlsson, J.-O., Keinonen, J., Östling, M., Petersson, C.S. (1991) Influence of standard processing on area-selective chemical vapour deposition of tungsten on tantalum disilicide. Applied Surface Science, 53. 35-40 doi:10.1016/0169-4332(91)90239-g
Plain TextEriksson, Th., Wang, J.-T., Carlsson, J.-O., Keinonen, J., Östling, M., Petersson, C.S. (1991) Influence of standard processing on area-selective chemical vapour deposition of tungsten on tantalum disilicide. Applied Surface Science, 53. 35-40 doi:10.1016/0169-4332(91)90239-g
In(n.d.) Applied Surface Science Vol. 53. Elsevier BV

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Erlesand, U., Östling, M., Bodén, K. (1991) Formation of iron disilicide on amorphous silicon. Applied Surface Science, 53. 153-158 doi:10.1016/0169-4332(91)90256-j
Östling, Mikael, Petersson, Sture (1991) Preface. Applied Surface Science, 53. doi:10.1016/0169-4332(91)90231-8
Eriksson, Th., Carlsson, J.‐O., Mohadjeri, B., Östling, M., d’Heurle, F. M., Petersson, C. S., Keinonen, J. (1990) Removal of the process‐induced fluorine associated to chemical vapor deposition of tungsten onto a polycrystalline silicon gate structure by heat treatment in a hydrogen‐containing atmosphere. Journal of Applied Physics, 68 (5). 2112-2120 doi:10.1063/1.346566
Ammerlaan, J.A.M., Boogaard, D.R.M., van der Put, P.J., Schoonman, J. (1991) Chemical vapour deposition of tungsten by H2 reduction of WC16. Applied Surface Science, 53. 24-29 doi:10.1016/0169-4332(91)90237-e
Thomas, O., Scilla, G., Gas, P., Cotte, J., Joshi, R.V., Bakli, M., Göltz, G., d'Heurle, F.M. (1991) Diffusion of dopants in tungsten disilicide: effects of diffusion paths. Applied Surface Science, 53. 165-170 doi:10.1016/0169-4332(91)90258-l
Eriksson, Th., Carlsson, J.‐O., Keinonen, J., Petersson, C. S. (1988) Fluorine redistribution in a chemical vapor deposited tungsten/polycrystalline silicon gate structure during heat treatment. Journal of Applied Physics, 64 (6). 3229-3232 doi:10.1063/1.341541
d'Heurle, F.M., Aboelfotoh, M.O., Pesavento, F., Petersson, C.S. (1991) Schottky barriers of scandium and scandium monosilicide on silicon. Applied Surface Science, 53. 237-239 doi:10.1016/0169-4332(91)90269-p
Thomas, O., Petersson, C.S., d'Heurle, F.M. (1991) The reaction of scandium thin films with silicon: diffusion, nucleation, resistivities. Applied Surface Science, 53. 138-146 doi:10.1016/0169-4332(91)90254-h
Barge, T., Poize, S., Bernardini, J., Gas, P. (1991) Cobalt lattice diffusion in bulk cobalt disilicide. Applied Surface Science, 53. 180-185 doi:10.1016/0169-4332(91)90260-q
Nygren, S., Caffin, D., Östling, M., d'Heurle, F.M. (1991) Morphological instabilities of nickel and cobalt silicides on silicon. Applied Surface Science, 53. 87-91 doi:10.1016/0169-4332(91)90247-h
Madar, R., Bernard, C. (1991) Chemical vapour deposition of metal silicides in silicon microelectronics. Applied Surface Science, 53. 1-10 doi:10.1016/0169-4332(91)90234-b
 
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