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Iwatsuki, Masashi, Sato, Tomoshige, Yamamoto, Youiti (1996) High-temperature STM for atomic processes on semiconductor surfaces. Applied Surface Science, 92. 321-330 doi:10.1016/0169-4332(95)00249-9

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Reference TypeJournal (article/letter/editorial)
TitleHigh-temperature STM for atomic processes on semiconductor surfaces
JournalApplied Surface Science
AuthorsIwatsuki, MasashiAuthor
Sato, TomoshigeAuthor
Yamamoto, YouitiAuthor
Year1996 (February)Volume92
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(95)00249-9Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9897979Long-form Identifiermindat:1:5:9897979:2
GUID0
Full ReferenceIwatsuki, Masashi, Sato, Tomoshige, Yamamoto, Youiti (1996) High-temperature STM for atomic processes on semiconductor surfaces. Applied Surface Science, 92. 321-330 doi:10.1016/0169-4332(95)00249-9
Plain TextIwatsuki, Masashi, Sato, Tomoshige, Yamamoto, Youiti (1996) High-temperature STM for atomic processes on semiconductor surfaces. Applied Surface Science, 92. 321-330 doi:10.1016/0169-4332(95)00249-9
In(n.d.) Applied Surface Science Vol. 92. Elsevier BV

See Also

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Yamamoto, Youiti, Sueyoshi, Takashi, Sato, Tomoshige, Iwatsuki, Masashi (2000) High-temperature scanning tunneling microscopy study of the ‘16×2’⇔(1×1) phase transition on an Si(110) surface. Surface Science, 466 (1). 183-188 doi:10.1016/s0039-6028(00)00773-1
Yamamoto, Youiti, Sueyoshi, Takashi, Sato, Tomoshige, Iwatsuki, Masashi (1997) Measurement of Terrace Width Distribution on an Si(110) Surface Using High-Temperature Scanning Tunneling Microscopy. Japanese Journal of Applied Physics, 36. 4468-4469 doi:10.1143/jjap.36.4468
Yamamoto, Youiti, Sueyoshi, Takashi, Sato, Tomoshige, Iwatsuki, Masashi (1993) High-Temperature Scanning Tunneling Microscopy Observation of a (15, 17, 1) Facet Structure on a Si(110) Surface. Japanese Journal of Applied Physics, 32. 1808-1809 doi:10.1143/jjap.32.1808
Yamamoto, Youiti, Sueyoshi, Takashi, Sato, Tomoshige, Iwatsuki, Masashi (1993) High-Temperature Scanning Tunneling Microscopy Study of the Phase Transition of 16-Structure Appearing on a Si(110) Surface. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l532
Yamamoto, Youiti, Sueyoshi, Takashi, Sato, Tomoshige, Iwatsuki, Masashi (1994) Study of the crystal growth of a (15,17,1) vicinal plane on a Si(110) surface using high‐temperature scanning tunneling microscopy. Journal of Applied Physics, 75 (5). 2421-2425 doi:10.1063/1.356265
Iwatsuki, M., Kitamura, S., Sato, T., Sueyoshi, T. (1992) Observation of surface reconstruction and nano-fabrication on silicon under high temperature using a UHV-STM. Applied Surface Science, 60. 580-586 doi:10.1016/0169-4332(92)90478-g
Szklarczyk, Marek (1996) In situ radiotracer method for study of adsorption on semiconductor single crystal surfaces. Applied Surface Science, 92. 431-435 doi:10.1016/0169-4332(95)00271-5
Saiz-Pardo, R., Rincón, R., Flores, F. (1996) Schottky barrier formation for passivated semiconductor surfaces. Applied Surface Science, 92. 362-366 doi:10.1016/0169-4332(95)00256-1
Chen, B., Haneman, D. (1996) Theory of dipole generation at cleaved semiconductor surfaces. Applied Surface Science, 92. 345-349 doi:10.1016/0169-4332(95)00253-7
Katsuki, F., Kamei, K. (1996) STM observation of rapidly cooled Si(111) vicinal surfaces. Applied Surface Science, 94. 485-492 doi:10.1016/0169-4332(95)00414-9
Sato, Tomoshige, Sueyoshi, Takashi, Iwatsuki, Masashi (1994) Multilayer growth process of C60 on a Si(111) 7 × 7 surface. Surface Science, 321 (1). doi:10.1016/0039-6028(94)90017-5
 
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