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De´barre, D., Aliouchouche, A., Boulmer, J., Bourguignon, B., Budin, J.P. (1996) The role of gas-phase in the laser etching of Cu by CCl 4. Applied Surface Science, 96. 453-456 doi:10.1016/0169-4332(95)00457-2

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Reference TypeJournal (article/letter/editorial)
TitleThe role of gas-phase in the laser etching of Cu by CCl 4
JournalApplied Surface Science
AuthorsDe´barre, D.Author
Aliouchouche, A.Author
Boulmer, J.Author
Bourguignon, B.Author
Budin, J.P.Author
Year1996 (April)Volume96
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(95)00457-2Search in ResearchGate
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Mindat Ref. ID9898227Long-form Identifiermindat:1:5:9898227:3
GUID0
Full ReferenceDe´barre, D., Aliouchouche, A., Boulmer, J., Bourguignon, B., Budin, J.P. (1996) The role of gas-phase in the laser etching of Cu by CCl 4. Applied Surface Science, 96. 453-456 doi:10.1016/0169-4332(95)00457-2
Plain TextDe´barre, D., Aliouchouche, A., Boulmer, J., Bourguignon, B., Budin, J.P. (1996) The role of gas-phase in the laser etching of Cu by CCl 4. Applied Surface Science, 96. 453-456 doi:10.1016/0169-4332(95)00457-2
In(n.d.) Applied Surface Science Vol. 96. Elsevier BV

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Aliouchouche, A., Boulmer, J., Bourguignon, B., Budin, J.-P., Débarre, D., Desmur, A. (1993) Laser etching of silicon by chlorine: effect of post-desorption collisions and chlorine in-diffusion on the laser desorption yield. Applied Surface Science, 69. 52-58 doi:10.1016/0169-4332(93)90481-p
Boulmer, J., Bourguignon, B., Budin, J.P., Debarre, D. (1989) Time of flight study of low pressure laser etching of silicon by chlorine. Applied Surface Science, 43. 424-431 doi:10.1016/0169-4332(89)90250-x
Bourguignon, B., Stoica, M., Dragnea, B., Carrez, S., Boulmer, J., Budin, J.-P., Débarre, D., Aliouchouche, A. (1995) Laser modifications of Si(100) : Cl surfaces induced by surface melting: etching and cleaning. Surface Science, 338 (1). 94-110 doi:10.1016/0039-6028(95)00518-8
Desmur, A., Bourguignon, B., Boulmer, J., Ozenne, J.‐B., Budin, J.‐P., Débarre, D., Aliouchouche, A. (1994) Pulsed laser etching of silicon: Dopant profile modification and dopant desorption induced by surface melting. Journal of Applied Physics, 76 (5). 3081-3087 doi:10.1063/1.357490
Débarre, D., Aliouchouche, A., Boulmer, J., Bourguignon, B., Budin, J. P., Carrez, S. (1994) Ablation et gravure laser. Annales de Physique, 19. doi:10.1051/anphys/1994056
Desmur, A., Ozenne, J.-B., Bourguignon, B., Boulmer, J., Budin, J.-P., Débarre, D., Aliouchouche, A. (1994) Laser etching of silicon: Dopant desorption, diffusion and segregation during laser induced surface melting. Surface and Interface Analysis, 22 (1). 27-30 doi:10.1002/sia.740220109
Pfleging, W., Wesner, D.A., Kreutz, E.W. (1996) CCl 4 -assisted CF 4 etching of silicon in a microwave-assisted LDE (laser dry etching)-process. Applied Surface Science, 96. 496-500 doi:10.1016/0169-4332(95)00502-1
Boulmer, J., Desmur, A., Bourguignon, B., Ozenne, J.-B., Laval, R., Aliouchouche, A., Débarre, D., Budin, J.-P. (1994) Modification of Foreign Atom Concentrations and Profiles in Silicon and Si1-x-y GexCy Alloys by Laser Chemical Etching. Materials Science Forum, 173. 23-28 doi:10.4028/www.scientific.net/msf.173-174.23
Streller, U., Li, B., Krabbe, A., Schwentner, N. (1996) Photon-induced dry etching of Si(100) in the VUV. Applied Surface Science, 96. 448-452 doi:10.1016/0169-4332(95)00456-4
Stangl, E., Proyer, S., Hellebrand, B., Ba¨uerle, D. (1996) Synthesis of RE-Ba-Sr-Cu-O by pulsed-laser deposition. Applied Surface Science, 96. 731-734 doi:10.1016/0169-4332(95)00576-5
Girardeaux, C., Idrissi, Y., Pireaux, J.J., Caudano, R. (1996) Etching and functionalization of a fluorocarbon polymer by UV laser treatment. Applied Surface Science, 96. 586-590 doi:10.1016/0169-4332(95)00558-7
 
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