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Ikeda, Hiroya, Yamada, Tohru, Hotta, Koji, Zaima, Shigeaki, Yasuda, Yukio (1996) Initial oxidation of Si(311) surfaces studied by high-resolution electron energy loss spectroscopy. Applied Surface Science, 100. 431-435 doi:10.1016/0169-4332(96)00314-5

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Reference TypeJournal (article/letter/editorial)
TitleInitial oxidation of Si(311) surfaces studied by high-resolution electron energy loss spectroscopy
JournalApplied Surface Science
AuthorsIkeda, HiroyaAuthor
Yamada, TohruAuthor
Hotta, KojiAuthor
Zaima, ShigeakiAuthor
Yasuda, YukioAuthor
Year1996 (July)Volume100
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(96)00314-5Search in ResearchGate
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Mindat Ref. ID9898495Long-form Identifiermindat:1:5:9898495:2
GUID0
Full ReferenceIkeda, Hiroya, Yamada, Tohru, Hotta, Koji, Zaima, Shigeaki, Yasuda, Yukio (1996) Initial oxidation of Si(311) surfaces studied by high-resolution electron energy loss spectroscopy. Applied Surface Science, 100. 431-435 doi:10.1016/0169-4332(96)00314-5
Plain TextIkeda, Hiroya, Yamada, Tohru, Hotta, Koji, Zaima, Shigeaki, Yasuda, Yukio (1996) Initial oxidation of Si(311) surfaces studied by high-resolution electron energy loss spectroscopy. Applied Surface Science, 100. 431-435 doi:10.1016/0169-4332(96)00314-5
In(n.d.) Applied Surface Science Vol. 100. Elsevier BV

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Ikeda, Hiroya, Hotta, Koji, Furuta, Shinya, Zaima, Shigeaki, Yasuda, Yukio (1996) Initial Oxidation Processes of H-Terminated Si(100) Surfaces Studied by High-Resolution Electron Energy Loss Spectroscopy. Japanese Journal of Applied Physics, 35. 1069-1072 doi:10.1143/jjap.35.1069
Ikeda, Hiroya, Hotta, Koji, Yamada, Tohru, Zaima, Shigeaki, Yasuda, Yukio (1995) Studies on Reaction Processes of Hydrogen and Oxygen Atoms with H2O-Adsorbed Si(100) Surfaces by High-Resolution Electron Energy Loss Spectroscopy. Japanese Journal of Applied Physics, 34. 2191-2195 doi:10.1143/jjap.34.2191
Ohmori, Kenji, Ikeda, Hiroya, Iwano, Hirotaka, Zaima, Shigeaki, Yasuda, Yukio (1997) Initial oxidation of Si(100)-(2 × 1)H monohydride surfaces studied by scanning tunneling microscopy/scanning tunneling spectroscopy. Applied Surface Science, 117. 114-118 doi:10.1016/s0169-4332(97)80062-1
Ikeda, H., Hotta, K., Yamada, T., Zaima, S., Iwano, H., Yasuda, Y. (1995) Oxidation of H‐terminated Si(100) surfaces studied by high‐resolution electron energy loss spectroscopy. Journal of Applied Physics, 77 (10). 5125-5129 doi:10.1063/1.359323
Yasuda, Yukio, Ikeda, Hiroya, Zaima, Shigeaki (1997) Effects of H-termination on initial oxidation process. Applied Surface Science, 113. 579-584 doi:10.1016/s0169-4332(96)00796-9
Ikeda, H., Hotta, K., Furuta, S., Zaima, S., Yasuda, Y. (1996) Influences of hydrogen on initial oxidation processes of H-terminated Si(100) surfaces. Applied Surface Science, 104. 354-358 doi:10.1016/s0169-4332(96)00170-5
Okada, Masahisa, Shimizu, Takaya, Ikeda, Hiroya, Zaima, Shigeaki, Yasuda, Yukio (1997) The influence of additional atomic hydrogen on the monolayer growth of Ge on Si(100) studied by STM. Applied Surface Science, 113. 349-353 doi:10.1016/s0169-4332(96)00777-5
Kageshima, Hiroyuki, Shiraishi, Kenji, Ikeda, Hiroya, Zaima, Shigeaki, Yasuda, Yukio (2000) Selectivity for O-adsorption position on dihydride Si(100) surfaces. Applied Surface Science, 159. 14-18 doi:10.1016/s0169-4332(00)00064-7
Nakagawa, Y., Higashi, M., Ikeda, H., Zaima, S., Yasuda, Y. (1998) Local bonding structures of SiO2 films on H-terminated Si(100) surfaces studied by using high-resolution electron energy loss spectroscopy. Applied Surface Science, 130. 192-196 doi:10.1016/s0169-4332(98)00049-x
Ikeda, Hiroya, Nakagawa, Yasuyuki, Zaima, Shigeaki, Ishibashi, Yoshihiro, Yasuda, Yukio (1999) Initial Oxidation Processes of H-Terminated Si(100) Surfaces Analyzed using a Random Sequential Adsorption Model. Japanese Journal of Applied Physics, 38. 3422-3425 doi:10.1143/jjap.38.3422
Ikegami, Hiroshi, Ohmori, Kenji, Ikeda, Hiroya, Iwano, Hirotaka, Zaima, Shigeaki, Yasuda, Yukio (1996) Oxide Formation onSi(100)-2×1Surfaces Studied by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy. Japanese Journal of Applied Physics, 35. 1593-1597 doi:10.1143/jjap.35.1593
 
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