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Morita, Yukinori, Tokumoto, Hiroshi (1996) STM analysis of wet-chemically prepared H-Si(001) surface. Applied Surface Science, 100. 440-443 doi:10.1016/0169-4332(96)00316-9

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Reference TypeJournal (article/letter/editorial)
TitleSTM analysis of wet-chemically prepared H-Si(001) surface
JournalApplied Surface Science
AuthorsMorita, YukinoriAuthor
Tokumoto, HiroshiAuthor
Year1996 (July)Volume100
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(96)00316-9Search in ResearchGate
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Mindat Ref. ID9898497Long-form Identifiermindat:1:5:9898497:0
GUID0
Full ReferenceMorita, Yukinori, Tokumoto, Hiroshi (1996) STM analysis of wet-chemically prepared H-Si(001) surface. Applied Surface Science, 100. 440-443 doi:10.1016/0169-4332(96)00316-9
Plain TextMorita, Yukinori, Tokumoto, Hiroshi (1996) STM analysis of wet-chemically prepared H-Si(001) surface. Applied Surface Science, 100. 440-443 doi:10.1016/0169-4332(96)00316-9
In(n.d.) Applied Surface Science Vol. 100. Elsevier BV

See Also

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Morita, Yukinori, Tokumoto, Hiroshi (1995) Ideal hydrogen termination of Si(001) surface by wet‐chemical preparation. Applied Physics Letters, 67 (18). 2654-2656 doi:10.1063/1.114326
Morita, Yukinori, Tokumoto, Hiroshi (1999) Origin of the 8/3×8/3 superstructure in STM images of the Si(111)-8×8:N surface. Surface Science, 443 (1). doi:10.1016/s0039-6028(99)01021-3
Morita, Y., Miki, K., Tokumoto, H. (1992) Atomic scale analyses of HF-treated Si(111) surfaces by STM. Applied Surface Science, 60. 466-473 doi:10.1016/0169-4332(92)90461-6
Nakamura, Masakazu, Morita, Yukinori, Tokumoto, Hiroshi (1997) Influence of film thickness on the molecular arrangement of copper phthalocyanine on hydrogen-terminated Si(111). Applied Surface Science, 113. 316-321 doi:10.1016/s0169-4332(96)00949-x
Satoh, Hideki, Nakane, Hideaki, Adachi, Hiroshi (1996) Behavior of zirconium onZrO/W(100)surface. Applied Surface Science, 100. 216-221 doi:10.1016/0169-4332(96)00291-7
Haga, Y., Miwa, S., Morita, E. (1996) Structural change of selenium-treated GaAs(001) surface observed by STM. Applied Surface Science, 107. 58-62 doi:10.1016/s0169-4332(96)00504-1
Kita, A., Ozawa, M., Gutleben, C.D. (1996) XPS analysis of chemically etched II–VI semiconductor surfaces. Applied Surface Science, 100. 652-655 doi:10.1016/0169-4332(96)00357-1
(1996) Preface. Applied Surface Science, 96. doi:10.1016/0169-4332(96)80024-9
Bakhtizin, R.Z., Kishimoto, J., Hashizume, T., Sakurai, T. (1996) STM study of Sr adsorption on Si(100) surface. Applied Surface Science, 94. 478-484 doi:10.1016/0169-4332(95)00413-0
Nützel, J.F., Brichzin, P., Abstreiter, G. (1996) RHEED investigations of surface diffusion on Si(001). Applied Surface Science, 102. 78-81 doi:10.1016/0169-4332(96)00024-4
Niwa, Masaaki, Okada, Kenji, Sinclair, Robert (1996) Atomically flat, ultrathin-SiO2/Si(001)interface formation by UHV heating. Applied Surface Science, 100. 425-430 doi:10.1016/0169-4332(96)00313-3
 
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