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Chane-Ché-Laï, F., Beau, C., Briand, D., Joubert, P. (1996) Electroluminescent porous silicon p-n junction using polycrystalline silicon films. Applied Surface Science, 102. 399-403 doi:10.1016/0169-4332(96)00086-4

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Reference TypeJournal (article/letter/editorial)
TitleElectroluminescent porous silicon p-n junction using polycrystalline silicon films
JournalApplied Surface Science
AuthorsChane-Ché-Laï, F.Author
Beau, C.Author
Briand, D.Author
Joubert, P.Author
Year1996 (August)Volume102
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(96)00086-4Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9898628Long-form Identifiermindat:1:5:9898628:8
GUID0
Full ReferenceChane-Ché-Laï, F., Beau, C., Briand, D., Joubert, P. (1996) Electroluminescent porous silicon p-n junction using polycrystalline silicon films. Applied Surface Science, 102. 399-403 doi:10.1016/0169-4332(96)00086-4
Plain TextChane-Ché-Laï, F., Beau, C., Briand, D., Joubert, P. (1996) Electroluminescent porous silicon p-n junction using polycrystalline silicon films. Applied Surface Science, 102. 399-403 doi:10.1016/0169-4332(96)00086-4
In(n.d.) Applied Surface Science Vol. 102. Elsevier BV

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Canham, L.T, Cox, T.I, Loni, A, Simons, A.J (1996) Progress towards silicon optoelectronics using porous silicon technology. Applied Surface Science, 102. 436-441 doi:10.1016/0169-4332(96)00094-3
Buchin, E.Yu., Churilov, A.B., Prokaznikov, A.V. (1996) Different morphology aspects of n-type porous silicon. Applied Surface Science, 102. 431-435 doi:10.1016/0169-4332(96)00093-1
Guyader, P., Joubert, P., Guendouz, M., Beau, C., Sarret, M. (1994) Effect of grain boundaries on the formation of luminescent porous silicon from polycrystalline silicon films. Applied Physics Letters, 65 (14). 1787-1789 doi:10.1063/1.112869
Berbezier, I., Martin, J.M., Bernardi, C., Derrien, J. (1996) EELS investigation of luminescent nanoporous p-type silicon. Applied Surface Science, 102. 417-422 doi:10.1016/0169-4332(96)00090-6
Ali, I., Muret, P., Nguyen Tan, T.A. (1996) Properties of semiconducting rhenium silicide thin films grown epitaxially on silicon (111). Applied Surface Science, 102. 147-150 doi:10.1016/0169-4332(96)00035-9
Holzmann, M., Többen, D., Abstreiter, G. (1996) Transport in silicon/germanium nanostructures. Applied Surface Science, 102. 230-236 doi:10.1016/0169-4332(96)00054-2
Kelires, P.C. (1996) Microstructural and elastic properties of silicon-germanium-carbon alloys. Applied Surface Science, 102. 12-16 doi:10.1016/0169-4332(96)00010-4
Rossow, U., Frotscher, U., Pietryga, C., Richter, W., Aspnes, D.E. (1996) Interpretation of the dielectric function of porous silicon layers. Applied Surface Science, 102. 413-416 doi:10.1016/0169-4332(96)00089-x
Ossicini, Stefano, Dorigoni, L., Bisi, O. (1996) Luminescence in porous silicon: the role of confinement and passivation. Applied Surface Science, 102. 395-398 doi:10.1016/0169-4332(96)00085-2
Zunger, Alex, Wang, Lin-Wang (1996) Theory of silicon nanostructures. Applied Surface Science, 102. 350-359 doi:10.1016/0169-4332(96)00078-5
Muret, P., Nguyen, T.T.A., Frangis, N., Van Tendeloo, G., Van Landuyt, J. (1996) Photoelectric and electrical responses of several erbium silicide/silicon interfaces. Applied Surface Science, 102. 173-177 doi:10.1016/0169-4332(96)00042-6
 
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