Leu, C.W, Hu, S.F, Chen, P.C, Hwang, H.L (1999) Improvement on properties and reliability of ultra-thin silicon oxide (3–5 nm) grown by microwave plasma afterglow at the low temperatures using mixtures of N2O and O2. Applied Surface Science, 142. 322-326 doi:10.1016/s0169-4332(98)00641-2
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Improvement on properties and reliability of ultra-thin silicon oxide (3–5 nm) grown by microwave plasma afterglow at the low temperatures using mixtures of N2O and O2 | ||
Journal | Applied Surface Science | ||
Authors | Leu, C.W | Author | |
Hu, S.F | Author | ||
Chen, P.C | Author | ||
Hwang, H.L | Author | ||
Year | 1999 (April) | Volume | 142 |
Publisher | Elsevier BV | ||
DOI | doi:10.1016/s0169-4332(98)00641-2Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 9900957 | Long-form Identifier | mindat:1:5:9900957:7 |
GUID | 0 | ||
Full Reference | Leu, C.W, Hu, S.F, Chen, P.C, Hwang, H.L (1999) Improvement on properties and reliability of ultra-thin silicon oxide (3–5 nm) grown by microwave plasma afterglow at the low temperatures using mixtures of N2O and O2. Applied Surface Science, 142. 322-326 doi:10.1016/s0169-4332(98)00641-2 | ||
Plain Text | Leu, C.W, Hu, S.F, Chen, P.C, Hwang, H.L (1999) Improvement on properties and reliability of ultra-thin silicon oxide (3–5 nm) grown by microwave plasma afterglow at the low temperatures using mixtures of N2O and O2. Applied Surface Science, 142. 322-326 doi:10.1016/s0169-4332(98)00641-2 | ||
In | (n.d.) Applied Surface Science Vol. 142. Elsevier BV |
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