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Shi, D.X, Zhang, X.F, Yuan, L, Gu, Y.S, Zhang, Y.P, Duan, Z.J, Chang, X.R, Tian, Z.Z, Chen, N.X (1999) Synthesis of crystalline C3N4 by MPCVD. Applied Surface Science, 148. 50-55 doi:10.1016/s0169-4332(99)00135-x

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Reference TypeJournal (article/letter/editorial)
TitleSynthesis of crystalline C3N4 by MPCVD
JournalApplied Surface Science
AuthorsShi, D.XAuthor
Zhang, X.FAuthor
Yuan, LAuthor
Gu, Y.SAuthor
Zhang, Y.PAuthor
Duan, Z.JAuthor
Chang, X.RAuthor
Tian, Z.ZAuthor
Chen, N.XAuthor
Year1999 (June)Volume148
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(99)00135-xSearch in ResearchGate
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Mindat Ref. ID9901376Long-form Identifiermindat:1:5:9901376:5
GUID0
Full ReferenceShi, D.X, Zhang, X.F, Yuan, L, Gu, Y.S, Zhang, Y.P, Duan, Z.J, Chang, X.R, Tian, Z.Z, Chen, N.X (1999) Synthesis of crystalline C3N4 by MPCVD. Applied Surface Science, 148. 50-55 doi:10.1016/s0169-4332(99)00135-x
Plain TextShi, D.X, Zhang, X.F, Yuan, L, Gu, Y.S, Zhang, Y.P, Duan, Z.J, Chang, X.R, Tian, Z.Z, Chen, N.X (1999) Synthesis of crystalline C3N4 by MPCVD. Applied Surface Science, 148. 50-55 doi:10.1016/s0169-4332(99)00135-x
In(n.d.) Applied Surface Science Vol. 148. Elsevier BV

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Gu, Y.S, Zhang, Y.P, Duan, Z.J, Chang, X.R, Tian, Z.Z, Shi, D.X, Ma, L.P, Zhang, X.F, Yuan, L (1999) Crystalline β-C3N4 films deposited on metallic substrates by microwave plasma chemical vapor deposition. Materials Science and Engineering: A, 271. 206-212 doi:10.1016/s0921-5093(99)00212-9
Wang, Y.S, Li, J.M, Lin, L.Y, Zhang, F.F (1999) The growth of SiC on Si substrates with C2H4 and Si2H6. Applied Surface Science, 148. 189-195 doi:10.1016/s0169-4332(99)00152-x
Gu, Y.S., Pan, L.Q., Chang, X.R., Tian, Z.Z. (1996) Carbon nitride films prepared by ion implantation. Journal of Materials Science Letters, 15 (15) doi:10.1007/bf00240806
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Choi, Jeong-Gil (1999) The surface properties of vanadium compounds by X-ray photoelectron spectroscopy. Applied Surface Science, 148. 64-72 doi:10.1016/s0169-4332(99)00132-4
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Wang, Youxiang, Chen, Xin (1999) Effect of rapid thermal annealing on Ti–AlN interfaces. Applied Surface Science, 148. 235-240 doi:10.1016/s0169-4332(99)00075-6
 
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