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Akane, T., Sugioka, K., Ogino, H., Takai, H., Midorikawa, K. (1999) KrF excimer laser induced ablation–planarization of GaN surface. Applied Surface Science, 148. 133-136 doi:10.1016/s0169-4332(99)00156-7

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Reference TypeJournal (article/letter/editorial)
TitleKrF excimer laser induced ablation–planarization of GaN surface
JournalApplied Surface Science
AuthorsAkane, T.Author
Sugioka, K.Author
Ogino, H.Author
Takai, H.Author
Midorikawa, K.Author
Year1999 (June)Volume148
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(99)00156-7Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9901384Long-form Identifiermindat:1:5:9901384:4
GUID0
Full ReferenceAkane, T., Sugioka, K., Ogino, H., Takai, H., Midorikawa, K. (1999) KrF excimer laser induced ablation–planarization of GaN surface. Applied Surface Science, 148. 133-136 doi:10.1016/s0169-4332(99)00156-7
Plain TextAkane, T., Sugioka, K., Ogino, H., Takai, H., Midorikawa, K. (1999) KrF excimer laser induced ablation–planarization of GaN surface. Applied Surface Science, 148. 133-136 doi:10.1016/s0169-4332(99)00156-7
In(n.d.) Applied Surface Science Vol. 148. Elsevier BV

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Obata, K., Sugioka, K., Takai, H., Midorikawa, K. (1999) TiN growth on Si(100) by pulsed laser deposition using homogenized KrF excimer laser beam. Applied Surface Science, 138. 335-339 doi:10.1016/s0169-4332(98)00414-0
Akane, T., Sugioka, K., Nomura, S., Hammura, K., Aoki, N., Toyoda, K., Aoyagi, Y., Midorikawa, K. (2000) F2 laser etching of GaN. Applied Surface Science, 168. 335-339 doi:10.1016/s0169-4332(00)00783-2
Zhang, J., Sugioka, K., Wada, S., Tashiro, H., Toyoda, K., Midorikawa, K. (1998) Precise microfabrication of wide band gap semiconductors (SiC and GaN) by VUV–UV multiwavelength laser ablation. Applied Surface Science, 127. 793-799 doi:10.1016/s0169-4332(97)00744-7
Sugioka, Koji, Akane, Toshimitsu, Obata, Kotaro, Toyoda, Koichi, Midorikawa, Katsumi (2002) Multiwavelength excitation processing using F2 and KrF excimer lasers for precision microfabrication of hard materials. Applied Surface Science, 197. 814-821 doi:10.1016/s0169-4332(02)00465-8
Braun, A, Zimmer, K, Bigl, F (2000) The influence of ambient temperature on KrF laser ablation of polyimide in air. Applied Surface Science, 154. 73-77 doi:10.1016/s0169-4332(99)00396-7
Silvain, Jean-François, Niino, Hiroyuki, Ono, Shigeyuki, Nakaoka, Shinya, Yabe, Akira (1999) Surface modification of elastomer/carbon composite by Nd+:YAG laser and KrF excimer laser ablation. Applied Surface Science, 141. 25-34 doi:10.1016/s0169-4332(98)00611-4
Obata, K., Sugioka, K., Midorikawa, K., Inamura, T., Takai, H. (2006) Deep etching of epitaxial gallium nitride film by multiwavelength excitation process using F2 and KrF excimer lasers. Applied Physics A, 82. 479-483 doi:10.1007/s00339-005-3409-8
Chong, Han-Woo, Mitchell, Arnan, Hayes, Jason P, Austin, Michael W (2002) Investigation of KrF excimer laser ablation and induced surface damage on lithium niobate. Applied Surface Science, 201. 196-203 doi:10.1016/s0169-4332(02)00904-2
Hong, M.H., Sugioka, K., Lu, Y.F., Midorikawa, K., Chong, T.C. (2002) Laser microfabrication of transparent hard materials and signal diagnostics. Applied Surface Science, 186. 556-561 doi:10.1016/s0169-4332(01)00638-9
Hanada, Y., Sugioka, K., Takase, H., Takai, H., Miyamoto, I., Midorikawa, K. (2005) Selective metallization of polyimide by laser-induced plasma-assisted ablation (LIPAA). Applied Physics A, 80. 111-115 doi:10.1007/s00339-004-2909-2
Akane, Toshimitsu, Sugioka, Koji, Midorikawa, Katsumi, Dubowski, Jan J., Aoki, Naoko, Toyoda, Koichi (2001) X-ray photoelectron spectroscopic study of KrF excimer laser nitrided InP surface. Journal of Applied Physics, 90 (12). 5851-5855 doi:10.1063/1.1412837
 
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