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McGinley, C., Cafolla, A.A., McLoughlin, E., Murphy, B., Teehan, D., Moriarty, P., Woolf, D.A. (2000) Core-level photoemission study of the BiGaAs(111)A interface. Applied Surface Science, 158. 292-300 doi:10.1016/s0169-4332(00)00012-x

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Reference TypeJournal (article/letter/editorial)
TitleCore-level photoemission study of the BiGaAs(111)A interface
JournalApplied Surface Science
AuthorsMcGinley, C.Author
Cafolla, A.A.Author
McLoughlin, E.Author
Murphy, B.Author
Teehan, D.Author
Moriarty, P.Author
Woolf, D.A.Author
Year2000 (May)Volume158
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(00)00012-xSearch in ResearchGate
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Mindat Ref. ID9901857Long-form Identifiermindat:1:5:9901857:5
GUID0
Full ReferenceMcGinley, C., Cafolla, A.A., McLoughlin, E., Murphy, B., Teehan, D., Moriarty, P., Woolf, D.A. (2000) Core-level photoemission study of the BiGaAs(111)A interface. Applied Surface Science, 158. 292-300 doi:10.1016/s0169-4332(00)00012-x
Plain TextMcGinley, C., Cafolla, A.A., McLoughlin, E., Murphy, B., Teehan, D., Moriarty, P., Woolf, D.A. (2000) Core-level photoemission study of the BiGaAs(111)A interface. Applied Surface Science, 158. 292-300 doi:10.1016/s0169-4332(00)00012-x
In(n.d.) Applied Surface Science Vol. 158. Elsevier BV

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McGinley, C, Cafolla, A.A, Murphy, B, Teehan, D, Moriarty, P (1999) The interaction of bismuth with the GaAs(111)B surface. Applied Surface Science, 152. 169-176 doi:10.1016/s0169-4332(99)00311-6
Cafolla, A.A., McGinley, C., McLoughlin, E., Hughes, G., Moriarty, P., Dunn, A.W., Ma, Y.-R., Teehan, D., Murphy, B., Downes, S., Woolf, D.A. (1997) Adsorption of Sb on GaAs(111)B studied by photoemission and low energy electron diffraction. Surface Science, 377. 130-134 doi:10.1016/s0039-6028(96)01379-9
Moriarty, P., Ma, Y.-R., Dunn, A. W., Beton, P. H., Henini, M., McGinley, C., McLoughlin, E., Cafolla, A. A., Hughes, G., Downes, S., Teehan, D., Murphy, B. (1997) Absence of long-range ordered reconstruction on the GaAs(311)A surface. Physical Review B, 55 (23) 15397-15400 doi:10.1103/physrevb.55.15397
Hughes, G.J, Ryan, P, Cafolla, A.A, Quinn, P (1999) Core level photoemission study of the deposition of thin iron layers on sulphur terminated InP(100) surfaces. Applied Surface Science, 147. 201-206 doi:10.1016/s0169-4332(99)00113-0
Thornton, J.M.C., Woolf, D.A., Weightman, P. (1998) Reconstructions of the GaAs(111)B surface. Applied Surface Science, 123. 115-119 doi:10.1016/s0169-4332(97)00433-9
Moriarty, P., Murphy, B., Roberts, L., Cafolla, A. A., Hughes, G., Koenders, L., Bailey, P., Woolf, D. A. (1995) Chemical bonding and structure of the sulfur treated GaAs(111)B surface. Applied Physics Letters, 67 (3). 383-385 doi:10.1063/1.114636
Moriarty, P, Upward, M.D, Ma, Y.-R, Dunn, A.W, Beton, P.H, Teehan, D, Woolf, D.A (1998) Reconstruction dependent adsorption of C60 on GaAs(111)B. Surface Science, 405 (1). 21-26 doi:10.1016/s0039-6028(97)01074-1
Negoro, Noboru, Fujikura, Hajime, Hasegawa, Hideki (2000) Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation. Applied Surface Science, 159. 292-300 doi:10.1016/s0169-4332(00)00054-4
Guaino, Ph., Carty, D., Hughes, G., Moriarty, P., Cafolla, A.A. (2003) Scanning tunneling microscopy study of pentacene adsorption on Ag/Si(1 1 1)-(√3 × √3)R30°. Applied Surface Science, 212. 537-541 doi:10.1016/s0169-4332(03)00052-7
Moriarty, P., Murphy, B., Roberts, L., Cafolla, A. A., Hughes, G., Koenders, L., Bailey, P. (1994) Photoelectron core-level spectroscopy and scanning-tunneling-microscopy study of the sulfur-treated GaAs(100) surface. Physical Review B, 50 (19) 14237-14245 doi:10.1103/physrevb.50.14237
Thornton, J.M.C., Weightman, P., Bailey, P., Woolf, D.A., Laine, A.D., Evans, D.A. (1996) Development of the interface at room and low temperature. Applied Surface Science, 104. 234-239 doi:10.1016/s0169-4332(96)00150-x
 
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