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Yasui, Kanji, Asada, Kunio, Akahane, Tadashi (2000) Epitaxial growth of 3C-SiC films on Si substrates by triode plasma CVD using dimethylsilane. Applied Surface Science, 159. 556-560 doi:10.1016/s0169-4332(00)00047-7

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of 3C-SiC films on Si substrates by triode plasma CVD using dimethylsilane
JournalApplied Surface Science
AuthorsYasui, KanjiAuthor
Asada, KunioAuthor
Akahane, TadashiAuthor
Year2000 (June)Volume159
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(00)00047-7Search in ResearchGate
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Mindat Ref. ID9901887Long-form Identifiermindat:1:5:9901887:6
GUID0
Full ReferenceYasui, Kanji, Asada, Kunio, Akahane, Tadashi (2000) Epitaxial growth of 3C-SiC films on Si substrates by triode plasma CVD using dimethylsilane. Applied Surface Science, 159. 556-560 doi:10.1016/s0169-4332(00)00047-7
Plain TextYasui, Kanji, Asada, Kunio, Akahane, Tadashi (2000) Epitaxial growth of 3C-SiC films on Si substrates by triode plasma CVD using dimethylsilane. Applied Surface Science, 159. 556-560 doi:10.1016/s0169-4332(00)00047-7
In(n.d.) Applied Surface Science Vol. 159. Elsevier BV

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Yasui, Kanji, Asada, Kunio, Maeda, Tomohiro, Akahane, Tadashi (2001) Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane. Applied Surface Science, 175. 495-498 doi:10.1016/s0169-4332(01)00109-x
Yasui, Kanji, Hashiba, Masahiro, Akahane, Tadashi (2003) Radio frequency power dependence of the characteristics of 3C-SiC on Si grown by triode plasma CVD using dimethylsilane. Applied Surface Science, 216. 580-584 doi:10.1016/s0169-4332(03)00443-4
Yasui, Kanji, Hoshino, Suguru, Akahane, Tadashi (2000) Epitaxial growth of AlN films on Si substrates by ECR plasma assisted MOCVD under controlled plasma conditions in afterglow region. Applied Surface Science, 159. 462-467 doi:10.1016/s0169-4332(00)00046-5
Narita, Yuzuru, Inubushi, Toshikazu, Yasui, Kanji, Akahane, Tadashi (2003) Si c(4×4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(0 0 1) using monomethylsilane and dimethylsilane. Applied Surface Science, 212. 730-734 doi:10.1016/s0169-4332(03)00090-4
Narita, Yuzuru, Harashima, Masayuki, Yasui, Kanji, Akahane, Tadashi, Takata, Masasuke (2006) Interpretation of initial stage of 3C-SiC growth on Si(100) using dimethylsilane. Applied Surface Science, 252. 3460-3465 doi:10.1016/j.apsusc.2005.05.021
Yasui, K, Kimura, M, Sanada, K, Akahane, T (1999) Heteroepitaxy of 3C-SiC using triode plasma enhanced chemical vapor deposition on Si substrates without buffer layer. Applied Surface Science, 142. 381-385 doi:10.1016/s0169-4332(98)00718-1
Narita, Yuzuru, Inubushi, Toshikazu, Harashima, Masayuki, Yasui, Kanji, Akahane, Tadashi (2003) Initial stage of 3C–SiC growth on Si(0 0 1)–2 × 1 surface using monomethylsilane. Applied Surface Science, 216. 575-579 doi:10.1016/s0169-4332(03)00441-0
Yasui, Kanji, Hashiba, Masahiro, Narita, Yuzuru, Akahane, Tadashi (2002) Comparison of the Growth Characteristics of SiC on Si between Low-Pressure CVD and Triode Plasma CVD. Materials Science Forum, 389. 367-370 doi:10.4028/www.scientific.net/msf.389-393.367
Takahashi, Kazuki, Yasui, Kanji, Suemitsu, Maki, Kato, Ariyuki, Kuroki, Yuichiro, Takata, Masasuke, Akahane, Tadashi (2006) Epitaxial Growth of Hexagonal GaN Films on SiC/Si Substrates by Hot-Mesh CVD Method. Advanced Materials Research, 11. 261-264 doi:10.4028/www.scientific.net/amr.11-12.261
Hashim, A.M., Yasui, K. (2008) Low Temperature Heteroepitaxial Growth of 3C-SiC on Silicon Substrates by Triode Plasma Chemical Vapor Deposition using Dimethylsilane. Journal of Applied Sciences, 8. 3523-3527 doi:10.3923/jas.2008.3523.3527
Yasui, Kanji, Arayama, Tatsuro, Okutani, Satoshi, Akahane, Tadashi (2003) Generation of ammonia plasma using a helical antenna and nitridation of GaAs surface. Applied Surface Science, 212. 619-624 doi:10.1016/s0169-4332(03)00135-1
 
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